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  10mh Datasheet PDF File

For 10mh Found Datasheets File :: 598    Search Time::1.297ms    
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    STA315 STA315A

Sanken electric
Part No. STA315 STA315A
OCR Text ...15 * PW 1ms, Duty 25% L = 10mh, single pulse C1.50.5 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 tstg (s) 8.5 tf (s) 2.5 1 E 2 B 3 C 4 ...
Description Power Transistor Array

File Size 23.25K  /  1 Page

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    2SD1457 2SD1457A

Panasonic Semiconductor
Part No. 2SD1457 2SD1457A
OCR Text ...VCB = 200V, IE = 0 IC = 2A, L = 10mh IE = 0.1A, IC = 0 VCE = 2V, IC = 2A IC = 3A, IB = 0.06A IC = 3A, IB = 0.06A VCE = 10V, IC = 0.5A, f = 1MHz 15 150 5 700 10000 1.5 2.5 V V MHz min typ max 100 Unit A V V *h FE Rank classification...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.84K  /  2 Page

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    10BQ060

International Rectifier
Part No. 10BQ060
OCR Text ...mJ A TJ = 25 C, IAS = 1.0A, L = 10mh Current decaying linearly to zero in 1 sec Frequency limited by TJ max. Va = 1.5 x Vr typical Following any rated load condition and with rated VRRM applied Electrical Specifications Parameters VFM ...
Description SCHOTTKY RECTIFIER 1 Amp

File Size 84.32K  /  6 Page

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    CMT08N50N220FP CMT08N50N220 CMT08N50

Champion Microelectronic, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
CHAMP[Champion Microelectronic Corp.]
Electronic Theatre Controls, Inc.
Part No. CMT08N50N220FP CMT08N50N220 CMT08N50
OCR Text ...= 100V, VGS = 10V, IL = 8A, L = 10mh, RG = 25) JC JA TL 1.0 62.5 260 J J /W TJ, TSTG EAS Non-repetitive Symbol ID IDM VGS VGSM PD 125 40 -55 to 150 320 J mJ Value 8.0 32 20 40 V V W Unit A Gate-to-Source Voltage Maximum Lead Temperat...
Description POWER FIELD EFFECT TRANSISTOR 功率场效应晶体管

File Size 213.60K  /  7 Page

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    FDPF7N50U FDP7N50U

Fairchild Semiconductor
Part No. FDPF7N50U FDP7N50U
OCR Text ...ature 2. IAS = 7A, VDD = 50V, L=10mh, RG = 25, Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Character...
Description 500V N-Channel MOSFET

File Size 950.07K  /  10 Page

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    FDPF7N50 FDP7N50

Fairchild Semiconductor
Part No. FDPF7N50 FDP7N50
OCR Text ...ature 2. IAS = 7A, VDD = 50V, L=10mh, RG = 25, Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Character...
Description 500V N-Channel MOSFET

File Size 298.36K  /  10 Page

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    2SK2618ALS

Sanyo Semicon Device
Part No. 2SK2618ALS
OCR Text ...2 Package limited *3 VDD=50V, L=10mh, IAV=5A *4 L10mh, single pulse Marking : K2618 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as gener...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 43.70K  /  4 Page

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    PA02 PA02A

APEX[Apex Microtechnology]
Part No. PA02 PA02A
OCR Text ... 2A ILIM = 5A 18V 2mF 0.7mF .2H 10mh 15V 10mF 2.2mF .7H 25mH 10V 25mF 10mF 5H 50mH * If the inductive load is driven near steady state conditions, allowing the output voltage to drop more tha...
Description POWER OPERATIONAL AMPLIFIERS

File Size 208.80K  /  4 Page

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    SW840

List of Unclassifed Manufacturers
ETC
Part No. SW840
OCR Text ...ed by junction temperature 2. L=10mh,IAS=8.5A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD 1.8A,di/dt 100A/us,VDD BVDSS, Starting TJ=25 4. Pulse Test: Pulse Width 300us,Duty Cycle 2% 5. Essentially independent of operating temperature. 2/6 ...
Description N-Channel MOSFET

File Size 84.86K  /  6 Page

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