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International Rectifier, Corp.
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Part No. |
IRG4BC30KD IRG4BC30KDPBF
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OCR Text |
...250A VCE = VGE, IC = 250A VCE = 100v, IC = 16A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 12A See Fig. 13 IC = 12A, TJ = 150C...4a
10
t rr - (ns)
I F = 1 2A I F = 6 .0A
I F = 6 .0 A
40
0 100
d i f /d t - (A / ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 2.21V,@和VGE \u003d 15V的,集成电路\u003d 16A条) 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
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File Size |
192.51K /
10 Page |
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Fairchild Semiconductor Corporation
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Part No. |
KSH29 KSH29C KSH29CTF
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OCR Text |
...roduct VCE = 40V, VBE = 0 VCE = 100v, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4a, IC = 1A VCE = 10V, IC = 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz A A mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 5... |
Description |
NPN Epitaxial Silicon Transistor General Purpose Amplifier Low Speed Switching Applications
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File Size |
47.75K /
5 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
SFR9110 SFU9110 SFR9110TF
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OCR Text |
... Current : 10 A (Max.) @ VDS = -100v n Lower RDS(ON) : 0.912 (Typ.)
SFR/U9110
BVDSS = -100 V RDS(on) = 1.2 ID = -2.8 A
D-PAK
2 1 3 1...4a VDS=-40V,ID=-1.4a
4 O 4 O
o
V/ C ID=-250A V nA
VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-50V... |
Description |
Advanced Power MOSFET
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File Size |
249.49K /
7 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
SPI35N10 SPP35N10 SPB35N10
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OCR Text |
...ate voltage drain current
VDS =100v, VGS=0V, Tj =25C VDS =100v, VGS=0V, Tj =125C
A 0.01 1 1 36 1 100 100 44 nA m
Gate-source leakage ...4a
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drai... |
Description |
SIPMOS Power-Transistor
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File Size |
477.25K /
8 Page |
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it Online |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4
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OCR Text |
100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Ra...4a, VGS = -12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source... |
Description |
7A, -100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100v的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET 7A/ -100v/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100v/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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File Size |
58.67K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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