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  100v 4a Datasheet PDF File

For 100v 4a Found Datasheets File :: 2087    Search Time::3.406ms    
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    IRG4BC30KD IRG4BC30KDPBF

International Rectifier, Corp.
Part No. IRG4BC30KD IRG4BC30KDPBF
OCR Text ...250A VCE = VGE, IC = 250A VCE = 100v, IC = 16A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 12A See Fig. 13 IC = 12A, TJ = 150C...4a 10 t rr - (ns) I F = 1 2A I F = 6 .0A I F = 6 .0 A 40 0 100 d i f /d t - (A / ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 2.21V,@和VGE \u003d 15V的,集成电路\u003d 16A条)
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package

File Size 192.51K  /  10 Page

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    KSH29 KSH29C KSH29CTF

Fairchild Semiconductor Corporation
Part No. KSH29 KSH29C KSH29CTF
OCR Text ...roduct VCE = 40V, VBE = 0 VCE = 100v, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A IC = 1A, IB = 125mA VCE = 4a, IC = 1A VCE = 10V, IC = 200mA 3 40 15 20 20 1 75 0.7 1.3 V V MHz A A mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 5...
Description NPN Epitaxial Silicon Transistor
General Purpose Amplifier Low Speed Switching Applications

File Size 47.75K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. SFR9110 SFU9110 SFR9110TF
OCR Text ... Current : 10 A (Max.) @ VDS = -100v n Lower RDS(ON) : 0.912 (Typ.) SFR/U9110 BVDSS = -100 V RDS(on) = 1.2 ID = -2.8 A D-PAK 2 1 3 1...4a VDS=-40V,ID=-1.4a 4 O 4 O o V/ C ID=-250A V nA VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-50V...
Description Advanced Power MOSFET

File Size 249.49K  /  7 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPI35N10 SPP35N10 SPB35N10
OCR Text ...ate voltage drain current VDS =100v, VGS=0V, Tj =25C VDS =100v, VGS=0V, Tj =125C A 0.01 1 1 36 1 100 100 44 nA m Gate-source leakage ...4a 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drai...
Description SIPMOS Power-Transistor

File Size 477.25K  /  8 Page

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    STU10NC70Z STU10NC70ZI

STMicroelectronics
Part No. STU10NC70Z STU10NC70ZI
OCR Text ...= 10.6 A, di/dt = 100A/s, VDD = 100v, Tj = 150C (see test circuit, Figure 5) 660 8.7 26 Test Conditions Min. Typ. Max. 9.4 37.6 1.6 Unit A A V ns C A GATE-SOURCE ZENER DIODE Symbol BVGSO T Rz Parameter Gate-Source Breakdown Voltage Volt...
Description N-CHANNEL 700V - 0.58ohm - 9.4a Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET

File Size 291.38K  /  10 Page

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    2SC5103

ROHM[Rohm]
Part No. 2SC5103
OCR Text ...C = 50A IC = 1mA IE = 50A VCB = 100v VEB = 5V IC/IB = 3A/0.15A IC/IB = 4a/0.2A IC/IB = 3A/0.15A IC/IB = 4a/0.2A VCE/IC = 2V/1A VCB = 10V , IE = 0.5A , f = 30MHz VCE = 10V , IE = 0A , f = 1MHz IC = 3A , RL = 10 IB1 = -IB2 = 0.15A VCC 30V ...
Description High speed switching transistor (60V 5A)
High speed switching transistor (60V, 5A)

File Size 61.06K  /  2 Page

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    FDM3622

Fairchild Semiconductor
Part No. FDM3622
OCR Text 100v, 4.4a, 60m Features r DS(ON) = 44m (Typ.), VGS = 10V, ID = 4.4a Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) Gener...
Description 100v N-Channel UltraFet Trench.MOSFET
N-Channel PowerTrench MOSFET

File Size 166.17K  /  11 Page

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    FS3KM FS3KM-10

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
Part No. FS3KM FS3KM-10
OCR Text ... 20 Tch = 25C ID = 3A VDS = 100v 200V 12 400V 8 8 4 4 2 0 0 4 8 12 16 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE ...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 47.14K  /  4 Page

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    FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R4 FSL913A0R1 FSL913A0R3 FSL9130R3 FSL9130R4
OCR Text 100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Ra...4a, VGS = -12V Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source...
Description 7A, -100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100v, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100v的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET
7A/ -100v/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
5A/ -100v/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 58.67K  /  8 Page

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    IRF9130

Intersil Corporation
Part No. IRF9130
OCR Text 100v, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced ...4a 1.8 0.6 1.4 0.4 VGS = - 20V 0.2 1.0 0.6 0 0 -10 -30 -20 ID, DRAIN CURRENT (A) -...
Description -12A, -100v, 0.30 Ohm, P-Channel Power MOSFET

File Size 59.35K  /  7 Page

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