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ST Microelectronics
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Part No. |
BYV541V-200 BYV54V-200
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OCR Text |
...) rms forward current per diode 100 a i f(av) average forward current d = 0.5 tc=90c per diode 50 a i fsm surge non repetitive forward curre...200 v isotop is a trademark of stmicroelectronics. k2 a2 a1 k1 byv541v-200 a2 k1 a1 k2 byv54v-200
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Description |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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File Size |
237.94K /
5 Page |
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意法半导
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Part No. |
BYW51F-200
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OCR Text |
...nt tp=10ms sinusoidal per diode 100 a tstg tj storage and junction temperature range - 65 to + 150 - 65 to + 150 c c symbol parameter value unit v rrm repetitive peak reverse voltage 200 v a1 k a2 a1 k a2 a1 k a2 1/6
symbol test conditi... |
Description |
High Efficiency Fast Recovery Rectifier Diodes(高效快速修复整流二极管)
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File Size |
81.37K /
6 Page |
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意法半导 STMicroelectronics N.V.
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Part No. |
BYW51G-200
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OCR Text |
...nt tp=10ms sinusoidal per diode 100 a t stg tj storage and junction temperature range - 65 to + 150 - 65 to + 150 c c symbol parameter value unit v rrm repetitive peak reverse voltage 200 v k a2 a1 a1 k a2 1/5
symbol test conditions min... |
Description |
High Efficiency Fast Recovery Rectifier Diodes(高效快速修复整流二极管) 高效快速恢复整流二极管(高效快速修复整流二极管
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File Size |
69.41K /
5 Page |
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VISHAY SEMICONDUCTORS
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Part No. |
ZGL41-200-E3/75
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OCR Text |
100 thru zgl41-200a document number 88409 26-jun-06 www.vishay.com 1 surface mount glass passivated power voltage-regulating diodes feature...200 v p d 1.0 w i r 1.0 a t j max. 150 c maximum ratings (t a = 25 c unless otherwise noted) par... |
Description |
200 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
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File Size |
81.94K /
4 Page |
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Philips
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Part No. |
BLA1011-200
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OCR Text |
...PL (W) 200
Gp
150 10 D 40 100 20 50
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0 0 50 100 150
0 250 200 PL (W)
0 0 2 4 6 PD (W) 8
VDS = 36 V; IDQ = 150 mA; f = 1060 MHz; tp = 50 s; = 2 %.
VDS = 36 V; IDQ = 150 mA; f = 1060 MHz; tp = 50 s; = 2 %.
Fig.2
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Description |
Avionics LDMOS transistor
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File Size |
69.15K /
12 Page |
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it Online |
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Price and Availability
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