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SiGe Semiconductor Inc.
SIGE[SiGe Semiconductor, Inc.]
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| Part No. |
PA2423G-EV PA2423 PA2423G
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| OCR Text |
...and 5. Number 1 2 3 4 5 6 7 8 9 10 11 12 Name
IN VRAMP GND1 VCTL GND2 GND3 OUT/VCC2 GND4 GND5 VCC1 GND6 VCC0 PA input PA enable/disable con...100 80 60 40 20 0 0.4 0.9 1.4 1.9 2.4 2.9 3.4
Output Power vs Control Voltage
25
Output Power... |
| Description |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
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| File Size |
214.45K /
9 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q62702-G0091
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| OCR Text |
... 1 0.5 15 15 5 8 1.5 3 3.7 2.5 <10 35 -60
Vcc - 0.3V 0V+0.3V
Max
Power Gain (S21 ) Noise Figure (in 50 System)
f=900MHz f=1.8GHz f...100 150 * Voltage V1 Vcc V2 Vc *Vpul Vc supply 0 0 0 DC 3.0V DC 0.0V PULSE(0 3V 100ns 0 0 9us 1000m)... |
| Description |
Self-Biased BFP405
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| File Size |
117.58K /
10 Page |
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ROHM[Rohm]
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| Part No. |
QSL10
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| OCR Text |
...LTAGE : VCE(sat) (V)
1000
10
1
Ta=25C VCE=2V
DC CURRENT GAIN : hFE
1
Ta=25C
Ta=-40C
0.1
100
0.1
Ta=100C Ta=25C Ta=-40C
IC/IB=50/1
VCE(sat) 0.01
0.01
IC/IB=20/1 IC/IB=10/1
10 0.001
VCE=2V... |
| Description |
General purpose transistor (isolated transistor and diode)
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| File Size |
67.14K /
5 Page |
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ROHM[Rohm]
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| Part No. |
QSL11
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| OCR Text |
...LTAGE : VCE(sat) (V)
1000
10
10
Ta=25C
IC/IB=20/1 Pulsed
Ta= -40C Ta=25C Ta=100C
Pulsed
DC CURRENT GAIN : hFE
Ta=25C Ta= -40C
1
IC/IB=20/1
1
VBE(sat)
100
0.1
IC/IB=50/1 IC/IB=10/1
0.1
Ta=100C Ta=2... |
| Description |
General purpose transistor (isolated transistor and diode)
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| File Size |
67.24K /
5 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
QSL12
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| OCR Text |
...LTAGE : VCE(sat) (V)
1000
10
10
Ta=25C
IC/IB=20/1 Pulsed
Ta= -40C Ta=25C Ta=100C
VCE=2V
DC CURRENT GAIN : hFE
Ta=25C Ta= -40C
1
1
VBE(sat)
100
0.1
IC/IB=50/1 IC/IB=20/1
VCE(sat)
0.1
Ta=25C Ta= -40... |
| Description |
General purpose transistor (isolated transistor and diode)
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| File Size |
66.94K /
5 Page |
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it Online |
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Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
QSL9
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| OCR Text |
...LTAGE : VBE(sat) (V)
1000
10
1
Ta=25C
DC CURRENT GAIN : hFE
Ta=25C Ta= -40C
IC/IB=20/1 VCE= -2V Pulsed
1
Ta=25C
Pulsed
Ta= -40C
VBE(sat)
Ta=100C
0.1
100
0.1
Ta=100C
VCE(sat)
IC/IB=50/1
0.0... |
| Description |
General purpose transistor (isolated transistor and diode)
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| File Size |
69.11K /
5 Page |
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it Online |
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COMCHIP[Comchip Technology]
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| Part No. |
RB751G40-G
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| OCR Text |
...eristics
1000m 100m 10m 1m 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
125C 75C 25C -25C
Fig. 2 Reverse Characteristics
100 10 1
125C
Reverse Current (A)
Forward Current (A)
75C
25C
100n 10n 1n 0 5 10 15 20 25 30 35
-25C... |
| Description |
SMD Schottky Barrier Diode
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| File Size |
47.50K /
2 Page |
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it Online |
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Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
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| Part No. |
RB751V40L-CB2-R RB751V40 RB751V40-CB2-R
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| OCR Text |
...00m Typ. pulse measurement 100m 10 100 Reverse Characteristics Ta = 125
DIODE
Ta = 75
Forward Current, IF (A)
10m
12 5 =
Reverse Current, IR (A)
Ta = 75
1 Ta = 25 100n
1m
Ta
100
Ta = 25 Ta = -25
10
10... |
| Description |
SCHOTTKY DIODES 0.03 A, 40 V, SILICON, SIGNAL DIODE
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| File Size |
35.00K /
3 Page |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SPM6-1000M
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| OCR Text |
10-1000 MHz COMMERCIAL SIGNAL PROCESSING RF COMPONENTS DESCRIPTION
The SPM6-1000M is a low cost, double balanced mixer offering excellent p...100 MHz, LO > RF
PACKAGE
COVER MATERIAL:
Plastic
0.25 0.035 0.38 0.19 3 2 0.420 0.05 0.05 1 0.... |
| Description |
LOW COST MINIATURE DOUBLE BALANCED MIXER 10-1000 MHz
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| File Size |
78.72K /
1 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
US5L10
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| OCR Text |
...LTAGE : VCE(sat) (V)
1000
10
1
Ta=25C VCE=2V
DC CURRENT GAIN : hFE
VBE(sat)
1
Ta=25C
Ta=-40C
0.1
100
0.1
Ta=100C Ta=25C Ta=-40C
IC/IB=50/1
VCE(sat)
0.01
IC/IB=20/1 IC/IB=10/1
0.01
10 ... |
| Description |
General purpose transistor (isolated transistor and diode)
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| File Size |
67.08K /
5 Page |
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it Online |
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Price and Availability
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