1.9ghz pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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1.9ghz Datasheet PDF File

For 1.9ghz Found Datasheets File :: 814 Search Time::2.578ms
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				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS482 Q62702-F1573
OCR Text	...1mA to 20mA. * fT = 8GHz F = 1.2dB at 900MHz * Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic dischar...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 8V dB 10V 5V...
Description	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.) From old datasheet system
File Size	53.54K / 6 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	SA620DK SA620
OCR Text	...he low-noise preamplifier has a 1.6dB noise figure at 900MHz with 11.5dB gain and an IP3 intercept of -3dBm at the input. The gain is stabil...9GHz, fLO = 0.8GHz, fIF = 100MHz fS = 0.9GHz, fLO = 0.8GHz, fIF = 100MHz 900MHz 900MHz 900MHz f2-f1 ...
Description	Low voltage LNA mixer and VCO - 1GHz Low voltage LNA, mixer and VCO - 1GHz
File Size	330.13K / 11 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC4405
OCR Text	...9B [2SC4405] 0.425 0.3 3 0~0.1 0.15 Features * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=1.5dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4405applied sets...
Description	NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications
File Size	111.73K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFL48V1920
OCR Text	1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0G...9GHz 80 70 OUTPUT POWER(dBm) 60 50 40 POWER ADDED EFFICIENCY(%) 50 Vds=12V 45 40 35 30 Vds=10V...
Description	From old datasheet system 1.9-2.0GHz BAND 60W GaAs FET
File Size	324.67K / 6 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TIM5964-35SLA-251
OCR Text	...ase UNIT MIN. mS V A V C/W -1.0 -5 TYP. MAX. 6500 -2.5 20 1.0 -4.0 26 1.3 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any inf...
Description	MICROWAVE POWER GaAs FET TIM5964-35SLA-251 From old datasheet system
File Size	36.69K / 4 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TIM5964-4UL TIM4450-4UL
OCR Text	...dBm 35.5 9.0 -44 36.5 10.0 1.1 37 -47 1.1 1.3 0.6 1.3 80 f = 5.9 - 6.4GHz add IM3 dBc A C VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated ...
Description	MICROWAVE POWER GaAs FET From old datasheet system
File Size	68.69K / 4 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC3778 0378
OCR Text	...VCB=10V, f=1MHz 40* 5.0 0.8 0.5 1.1 Conditions Ratings min typ max 1.0 10 200* GHz pF pF Unit A A * : The 2SC3778 is classified by 20mA h...9GHz VCE=10V, IC=20mA, f=0.9GHz VCE=10V, IC=5mA, f=0.9GHz, See specified Test Circuit. Ratings min 8...
Description	NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier Applications From old datasheet system NPN Epitaxial Planar Silicon Transistors
File Size	124.32K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFP181
OCR Text	... 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling ...9GHz VCE = Parameter 24 10V dB 5V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 ...
Description	NPN Silicon RF Transistor
File Size	77.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BFP183R Q62702-F1594
OCR Text	... 2 mA to 28 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) From old datasheet system
File Size	58.40K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BFP183W Q62702-F1503
OCR Text	... 2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...9GHz VCE = Parameter 24 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB 10V 5V 3V...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	59.61K / 7 Page	View it Online	Download Datasheet

For 1.9ghz Found Datasheets File :: 814 Search Time::2.578ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |