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				EMC[ELAN Microelectronics Corp]
Part No.	HM91710A HM91710B HM91710AP
OCR Text	...2 C3 C4 C1 OSCI OSCO XMUTE V SS 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 R3 R2 R1 R4 TONE PO HKS V DD C2 C3 C4 C1 OSCI OSCO XMUTE VSS HFI E...ROW/COLUMN PROGRAMMING COUNTER ROW1 ROW2 ROW3 ROW4 ROW INTERFACE CKT. D/A CONVERTER INPUT I...
Description	IC,TELEPHONE DIALER,TONE/PULSE,CMOS,DIP,16PIN,PLASTIC TONE/PULSE SWITCHABLE DIALER
File Size	128.41K / 19 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...ESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), acc...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet


Part No.	TC59SM704AS-75
OCR Text	1/49 tentative toshiba mos digital integrated circuit silicon monolithic 2,097,152-words 4 banks 16-bits synchronous dynamic...row address strobe cas column address strobe we write enable dqm (tc59sm708/m704) udqm/ldqm ...
Description	SYNCHRONOUS DRAM, PDSO54
File Size	2,430.04K / 49 Page	View it Online	Download Datasheet


Part No.	TC59SM704AFTL-70 TC59SM704AFTL-80 TC59SM716AFTL-70 TC59SM708AFTL-75
OCR Text	1/49 tentative toshiba mos digital integrated circuit silicon monolithic 2,097,152-words 4 banks 16-bits synchronous dynamic...row address strobe cas column address strobe we write enable dqm (tc59sm708/m704) udqm/ldqm ...
Description	32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
File Size	2,439.78K / 49 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...ns 35ns 40ns A0~A12 (A0~A11)1 A0~A8 (A0~A9)1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. ...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...C 35ns 40ns A0~A12 (A0~A11)1 A0~A8 (A0~A9)1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. ...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	...HPC 20ns 25ns A0~A12 (A0~A11)1 A0~A8 (A0~A9)1 Row Address Buffer Col. Address Buffer Memory Array 4,194,304 x 16 Cells OE Column Decoder DQ8 to DQ15 Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the righ...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

				PROMOS TECHNOLOGIES INC
Part No.	V54C3128164VCLK75HPC V54C3128804VCLK75EPC V54C3128164VCLK75IPC V54C3128164VCLK75PC V54C3128404VCLK75 V54C3128404VCLK75PC
OCR Text	1 v54c3128(16/80/40)4vc 128mbit sdram 3.3 volt, tsop ii / bga package 8m x 16, 16m x 8, 32m x 4 v54c3128(16/80/40)4vc rev. 1.3 november 200...row address strobe cas column address strobe we write enable a 0 ?a 11 address inputs ba0, ba1 bank ...
Description	8M X 16 SYNCHRONOUS DRAM, PBGA54 16M X 8 SYNCHRONOUS DRAM, PBGA54 32M X 4 SYNCHRONOUS DRAM, PBGA54
File Size	646.13K / 56 Page	View it Online	Download Datasheet

				Samsung
Part No.	K9GAG08B0D K9GAG08X0D
OCR Text	1 k9gag08u0d k9gag08b0d advance samsung confidential k9gag08x0d * samsung electronics reserves the right to c hange products or specificatio...row address consis ts of page address (a 13 ~ a 19 ) & plane address(a 20 ) & block address(a 21 ~...
Description	FLASH MEMORY
File Size	1,094.99K / 58 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	LPC2460FBD208 LPC2460FET208
OCR Text	1. general description nxp semiconductors designed the lpc2420/ 2460 microcontroller around a 16-bit/32-bit arm7tdmi-s cpu core with real-t...row a 1 p3[27]/d27/ cap1[0]/pwm1[4] 2v ssio 3 p1[0]/enet_txd0 4 p4[31]/cs1 5 p1[4]/enet_tx_en 6 p1[9...
Description	Flashless 16-bit/32-bit microcontroller; Ethernet, CAN, ISP/IAP, USB 2.0 device/host/OTG, external memory interface
File Size	582.56K / 87 Page	View it Online	Download Datasheet

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