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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2569
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| OCR Text |
... Tch Tstg
2 1
Ratings 50 20 0.2 0.4 150 150 -55 to +150
Unit V V A A mW C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 50 20 -- -- 0.... |
| Description |
Silicon N-Channel MOS FET
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| File Size |
39.94K /
8 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
2SK2613
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| OCR Text |
... transfer admittance: iYfsi = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-g... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
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| File Size |
220.85K /
6 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK2642-01MR
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| OCR Text |
... C C
Gate(G) Source(S)
*1 L=0.72mH, Vcc=50V
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drai... |
| Description |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
N-CHANNEL SILICON POWER MOS-FET
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| File Size |
86.57K /
4 Page |
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it Online |
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Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
2SK2713
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| OCR Text |
... Destruction.
Appendix1-Rev1.0
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| Description |
3M 18 PIECE QUICK CONNECT SET, INCLUDES: TWO YELLOW QUICK CONNECTS FOR 12-10 AWG WIRE, TWELVE BLUE QUICK CONNECTS FOR 18-14 AWG WIRE, AND FOUR RED QUICK CONNECTS FOR 22-16 AWG WIRE, FEATURES: FLAME RETARDANT, SIMPLE TO USE, VERSATILE
Switching (450V, 5A)
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| File Size |
151.52K /
5 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
2SK2715_1 2SK2715
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| OCR Text |
...nit : mm)
CPT3
6.5 5.1
2.3 0.5
Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuit can be simple. 6) Parallel use is easy.
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| Description |
10V Drive Nch MOS FET
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| File Size |
72.22K /
5 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2726
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| OCR Text |
... -- -- -- -- Typ -- -- -- -- -- 0.75 6.0 1100 330 65 21 5 8 20 65 60 40 0.95 260 Max -- -- 10 10 3.5 0.95 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF nc nc nc ns ns ns ns V ns I D = 7A, VGS = 0 I F = 7A, VGS = 0 diF/ d... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
48.45K /
10 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2727
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| OCR Text |
... -- -- -- -- Typ -- -- -- -- -- 0.75 7.0 1100 330 65 21 5 8 20 70 55 50 1.0 300 Max -- -- 10 10 3.5 0.95 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF nc nc nc ns ns ns ns V ns I D = 10A, VGS = 0 I F = 10A, VGS = 0 diF/ ... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
40.31K /
8 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2729
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| OCR Text |
... -- -- -- -- Typ -- -- -- -- -- 0.24 15 3300 900 120 55 14 17 45 140 150 85 1.0 400 Max -- -- 10 10 3.5 0.29 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF nc nc nc ns ns ns ns V ns I D = 20A, VGS = 0 I F = 20A, VGS = 0 d... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
49.96K /
10 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2730
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| OCR Text |
... -- -- -- -- Typ -- -- -- -- -- 0.2 20 3500 1000 150 65 16 24 50 140 200 110 1.1 450 Max -- -- 10 10 3.5 0.24 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF nc nc nc ns ns ns ns V ns I D = 25A, VGS = 0 I F = 25A, VGS = 0 ... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
50.35K /
10 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2734
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| OCR Text |
...
* Low on-resistance R DS(on) = 0.04 typ (at VGS = 10 V, I D = 2.5 A) * 4V gate drive devices. * Large current capacitance ID = 5 A
Outline
TO-92MOD.
D
G
3 S
2
1
1. Source 2. Drain 3. Gate
2SK2734
Absolute Maximum ... |
| Description |
Silicon N Channel MOS FET High Speed Power Switching
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| File Size |
45.64K /
9 Page |
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it Online |
Download Datasheet |
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