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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD592 2SD592A
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| OCR Text |
..., IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
min
typ
max 0.1
Unit A V
30 60 25 50 5 85 50 ... |
| Description |
Silicon NPN epitaxial planer type(For low-frequency output amplification)
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| File Size |
45.18K /
3 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD601A 2SD0601 2SD0601A 2SB709A
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| OCR Text |
...ditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA VCE = 2V, IC = 100mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Functio... |
| Description |
Silicon NPN epitaxial planer type
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| File Size |
37.72K /
2 Page |
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it Online |
Download Datasheet |
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SGS Thomson Microelectronics
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| Part No. |
STY34NB50F
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| OCR Text |
...rain-source on resistance v gs =10v i d = 17 a 0.11 0.14 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 34 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i ... |
| Description |
N - CHANNEL 500V - 0.11Ohm - 34 A - Max247 PowerMESH MOSFET
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| File Size |
87.37K /
8 Page |
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it Online |
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Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD662 2SD662B
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| OCR Text |
..., IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 10 200 400 5 30 30 220 150 1.2 V MHz pF min typ max 2 Unit A V V
Emitter to base voltage Forward curr... |
| Description |
Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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| File Size |
38.37K /
2 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AO4404B
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| OCR Text |
10v) 8.5a r ds(on) (at v gs =10v) < 24m r ds(on) (at v gs = 4.5v) < 30m r ds(on) (at v gs = 2.5v) < 48m 100% uis tested 100% r g tested symbol v ds drain-source voltage 30 the ao4404b uses advanced trench technology to pr... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
579.99K /
6 Page |
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it Online |
Download Datasheet |
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Alpha & Omega Semiconductor
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| Part No. |
AO4294A
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| OCR Text |
10v) 11.5a r ds(on) (at v gs =10v) < 12m r ds(on) (at v gs =4.5v) < 15.5m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol t 10s steady-state stea... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
320.46K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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