Description |
10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH) 10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(BIOS FLASH) DIE SALE, 2.7V, 7 MIL(BIOS FLASH) 10MS, 8 SAP, IND, ROHS-B, 2.7V(BIOS FLASH) 8-SOIC,AUTO TEMP,2.7V(SERIAL EE) 10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL EE) 10MS, 8 PDIP, EXT TEMP, GREEN,2.7V(SERIAL EE) 10MS, 8 TSSOP, INT TEMP, GREEN, 1.8V(SERIAL EE) 10MS, 8 PDIP, INT TEMP, GREEN, 2.7V(SERIAL EE) 10MS, DIE 1.8V, 11 MILS THICKNESS(SERIAL EE) 10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE) 10MS, 8 PDIP, IND TEMP, GREEN,2.7V(SERIAL EE) 8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 现场可编程门阵列(FPGA 10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列(FPGA Field Programmable Gate Array (FPGA) 现场可编程门阵列(FPGA 10MS, 8 SOIC, INT TEMP, GREEN, 2.7V(SERIAL EE) 现场可编程门阵列(FPGA 10MS, 8 PDIP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
|