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Samsung Electronic
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| Part No. |
M312L2923MT0
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| OCR Text |
...4 85 86 87 88 89 90 91 92 vddq /we dq41 /cas vss dqs5 dq42 dq43 vdd */cs2 dq48 dq49 vss */ck2 *ck2 vddq dqs6 dq50 dq51 vss vddid dq56 dq57 v...dd /v ddq d0 - d17 d0 - d17 vref v ddid strap: see note 4 v ddspd spd
184pin 1u registered ddr sdr... |
| Description |
M312L2923MT0 DDR SDRAM 184pin DIMM Data Sheet
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| File Size |
99.39K /
15 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU561622ELTP-JI
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| OCR Text |
...dq7 nc vddq ldqs nc vdd nc ldm /we /cas /ras /cs nc ba0 ba1 a10/ap a0 a1 a2 a3 vdd vss dq15 vssq dq14 dq13 vddq dq12 dq11 vssq dq10 dq9 vddq...dd /v ss supply power supply for internal circuits and input buffers. v ddq /v ssq supply power sup... |
| Description |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
235.26K /
29 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K4S560832D
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| OCR Text |
...cbr lwe ldqm clk cke cs ras cas we l(u)dqm lwe ldqm dqi clk add lcas lwcbr 8m x 8 8m x 8 timing register * samsung electronics reserves the ...dd dq0 v ddq n.c dq1 v ssq n.c dq2 v ddq n.c dq3 v ssq n.c v dd n.c we cas ras cs ba0 ba1 a10/ap a0 ... |
| Description |
8M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
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| File Size |
110.90K /
11 Page |
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it Online |
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Integrated Silicon Solution, Inc.
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| Part No. |
IS61NLP12832A-250B2 IS61NLP12832A-200B3I IS61NLP12836A-200B3I IS61NLP12832A-250TQI IS61NVP12836A-200TQI
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| OCR Text |
...e of the clock inputs and when we is low. separate byte enables allow individual bytes to be written. a burst mode pin (mode) defines the...dd v ss v ss v ss v dd v ddq dqb dqb e dqc dqc v ddq v dd v ss v ss v ss v dd v ddq dqb dqb f dqc dq... |
| Description |
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 32 ZBT SRAM, 2.6 ns, PBGA119
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 32 ZBT SRAM, 3.1 ns, PBGA165
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 3.1 ns, PBGA165
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 32 ZBT SRAM, 2.6 ns, PQFP100
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 3.1 ns, PQFP100
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| File Size |
226.88K /
29 Page |
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it Online |
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PROMOS TECHNOLOGIES INC
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| Part No. |
V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5
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| OCR Text |
... v ssq nc nc nc v ddq nc v dd we cas ras ba 1 ba 0 a 0 ap/a 10 a 2 a 1 a 5 a 6 a 7 a 8 a 9 cs v ref a 12 nc a 4 a 3 nc v ddq v ssq dq 2 nc nc cke a 11 ck v ssq dqs v ss dm ck v ss v dd v ss ( x4) a b c d e f g h j k l m v s... |
| Description |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PBGA60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
923.94K /
61 Page |
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SIEMENS AG
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| Part No. |
SPU03N60S5
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| OCR Text |
...cycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is return... |
| Description |
Cool MOS Power-Transistor(Cool MOS 功率晶体 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
107.70K /
11 Page |
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it Online |
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