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IRF[International Rectifier]
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| Part No. |
16YQ100C 16YQ100C-15
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| OCR Text |
...ristics 16YQ100C Units designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated IF(AV) 16 A to-257aa ceramic package. The device's forward voltage drop and reverse leakage current are optimi... |
| Description |
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES
100V 16A Hi-Rel Schottky Discrete Diode in a to-257aa package
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| File Size |
47.35K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY9140CM IRFY9140C
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| OCR Text |
to-257aa)
Product Summary
Part Number
IRFY9140C IRFY9140CM
IRFY9140C, IRFY9140CM 100V, P-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
RDS(on)
0.20 0.20
ID
-15.8A -15.8A
Eyelets
Ceramic Ceramic
HEXFET(R) MOSFET technology is... |
| Description |
POWER MOSFET THRU-HOLE (to-257aa)
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| File Size |
253.79K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY430CM
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| OCR Text |
...T
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achiev...257AA
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
3 1 2
to-257aa
NON-STANDARD PIN CONFIGURATIO... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)
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| File Size |
240.38K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY340CM
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| OCR Text |
...T
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achiev...257AA
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
3 1 2
to-257aa
NON-STANDARD PIN CONFIGURATIO... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=8.7A)
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| File Size |
235.76K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFY130CM
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| OCR Text |
...T
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achiev...257AA
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
3 1 2
to-257aa
NON-STANDARD PIN CONFIGURATIO... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A)
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| File Size |
286.64K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF5YZ48CM IRF5YZ48CM-15
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| OCR Text |
to-257aa)
IRF5YZ48CM 55V, N-CHANNEL
Product Summary
Part Number
IRF5YZ48CM BVDSS
55V
RDS(on) 0.029
ID 18A*
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to a... |
| Description |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*)
55V Single N-Channel Hi-Rel MOSFET in a to-257aa package
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| File Size |
103.91K /
7 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF5Y31N20
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| OCR Text |
to-257aa)
IRF5Y31N20 200V, N-CHANNEL
Product Summary
Part Number
IRF5Y31N20 BVDSS
200V
RDS(on) 0.092
ID 18A*
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to... |
| Description |
200V Single N-Channel Hi-Rel MOSFET in a to-257aa package
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
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| File Size |
97.48K /
7 Page |
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it Online |
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