...ent 20 Gain Bandwidth Product f T (GHz) Collector Output Capacitance Cob (pF) 5
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 2 1 0.5
16 VCE = 5V 12 VCE = 1V
8
4 0 1 2 5 10 20 Collector Current I C ...
...ht (reference value)
CMPAK-4(T) -- Conforms 0.006 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for info...
Transistor
2SD1010
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
5.00.2 4.00.2
q q q q
s Absolute ...1.27
13.50.5
High foward current transfer ratio hFE. Low collector to emitter saturation volta...
...tor DissipationTc = 25*Z P 30 W T Mounting Torque : 0.3Nm*j TOR (Recommended torque0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item Symbo...1 A m CBO CB I Max 0.1 CE CEOV = 100V Emitter Cutoff Current V = 7V I Max 5mA EBO EB DC Current Gain...
...tor DissipationTc = 25*Z P 30 W T Mounting Torque TOR (Recommended torque : 0.3Nm*j 0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item Symb...1 A m CBO CB V = 200V I Max 0.1 CEO CE Emitter Cutoff Current I Max 5mA EB EBO V = 7V DC Current Gai...
...em Symbol Conditions Ratings ni t U Storage Temperature Tstg -55*+150 *Z Junction Temperature Tj +150 *Z Collector to Base Voltage V 100 V C...1 A BP Total Transistor DissipationTc = 25*Z P 50 W T Mounting Torque TOR (Recommended torque : 0.3N...
...tor DissipationTc = 25*Z P 50 W T Mounting Torque TOR (Recommended torque : 0.3Nm*j 0.5 Nm *oeElectrical Characteristics (Tc=25*Z) Item Symb...1 mA CBO CB V = 200V I Max 0.1 CEO CE Emitter Cutoff Current I Max 5 mA EB EBO V = 7V DC Current Gai...
Transistor
2SD1030
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
2.8 -0.3
+0.2
s Features
q q q q q
0.650.15
+0.25 1.5 -0.05
0.650.15
+0.2 1.1 -0.1
s Absolute Maximum Ratings
Para...
Description
Silicon NPN epitaxial planer type(For low-frequency amplification) 50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236