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silicon-nitride Datasheet PDF File

For silicon-nitride Found Datasheets File :: 1826 Search Time::4.719ms
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				Cree, Inc
Part No.	CMPA2735075F CMPA2735075F-TB
OCR Text	...uperior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths com...
Description	75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
File Size	1,973.94K / 10 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA2735075D
OCR Text	...superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths com...
Description	75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
File Size	260.93K / 7 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA2560025F-AMP CMPA2560025F-TB CMPA2560025F-15
OCR Text	...superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths co...
Description	25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
File Size	839.29K / 11 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA2560025D
OCR Text	...superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths co...
Description	25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
File Size	497.29K / 9 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA2060025D
OCR Text	...superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths co...
Description	25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier
File Size	299.29K / 7 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA1D1E030D
OCR Text	...integrated circuit (mmic) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. gan-on-sic has superior properties compared to silicon, gallium arsenide or gan-on-si, including higher breakdown voltage, highe...
Description	30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier
File Size	428.32K / 6 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA1D1E025F CMPA1D1E025F-AMP
OCR Text	... integrated circuit (mmic) on a silicon carbide (sic) substrate, using a 0.25 m gate length fabrication process. the ku band 25w mmic is targeted for commercial ku band satellite communications applications. it offers high gain ...
Description	25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
File Size	3,850.30K / 17 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA0060025F CMPA0060025F-AMP CMPA0060025F-TB
OCR Text	...uperior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths com...
Description	25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
File Size	1,859.58K / 11 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	CMPA0060025D
OCR Text	...superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths co...
Description	25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier
File Size	474.47K / 7 Page	View it Online	Download Datasheet

				http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	MSA-0711 MSA-0711-BLK MSA-0711-TR1
OCR Text	Silicon Bipolar MMIC Amplifier Technical Data MSA-0711 Features * Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 1.9 GHz * 12.0 dB T...nitride self-alignment, ion implantation, and gold metalli- SOT-143 Package zation to achieve ...
Description	Cascadable Silicon Bipolar MMIC Amplifier
File Size	42.95K / 4 Page	View it Online	Download Datasheet

For silicon-nitride Found Datasheets File :: 1826 Search Time::4.719ms
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