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ST Microelectronics
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| Part No. |
STB11NM80T4 STF11NM80
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| OCR Text |
...in pro- cess with the company?s powermesh? horizontal layout assuring an oustanding low on-resistance. the adoption of the company?s proprietary strip technique yields overall dynamic performance that is significantly better than that of si... |
| Description |
N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/TO-220FP/D2PAK/TO-247 MDMESH MOSFET
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| File Size |
363.08K /
14 Page |
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ST Microelectronics
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| Part No. |
STB80N20M5 STP80N20M5
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| OCR Text |
...stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which r... |
| Description |
D2PAK MDmesh V Power MOSFET
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| File Size |
944.11K /
14 Page |
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ST Microelectronics
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| Part No. |
STL42N65M5
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| OCR Text |
... with the well known company?s powermesh? horizontal layout. the resulting product has an extremely low on- resistance, unmatched among silicon-based power mosfets, making it especially suited for applications which require superior po... |
| Description |
34 A MDmesh V Power MOSFET
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| File Size |
668.45K /
11 Page |
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ST Microelectronics
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| Part No. |
STF13N95K3
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| OCR Text |
...s well-established strip-based powermesh? layout with a new optimized vertical structure. the innovative design offer significantly reduced on- resistance, exceptional dynamic performance and very large avalanche capab ility, making the... |
| Description |
Power MOSFETs
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| File Size |
550.44K /
12 Page |
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意法半导
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| Part No. |
STGW38IH130D
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| OCR Text |
...his igbt utilizes th e advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. this device is well suited for the resonant or soft switching applications. figure 1. inter... |
| Description |
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| File Size |
672.95K /
14 Page |
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ST Microelectronics
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| Part No. |
P3NB60FP
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| OCR Text |
powermesh ? mosfet n typical r ds(on) = 3.3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using ... |
| Description |
STP3NB60
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| File Size |
265.80K /
9 Page |
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ST Microelectronics
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| Part No. |
P3NB80 P3NB80FP
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| OCR Text |
powermesh ? mosfet n typical r ds(on) = 4.6 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using ... |
| Description |
Search --To STP3NB80FP
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| File Size |
275.36K /
9 Page |
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ST Microelectronics
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| Part No. |
P3NB90FP
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| OCR Text |
powermesh ? mosfet n typical r ds (on) = 4 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized n very low intrinsic capacitances description using the latest high voltage mesh overlay ? process, stmicroelectr... |
| Description |
Search --To STP3NB90FP
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| File Size |
155.65K /
10 Page |
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it Online |
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Price and Availability
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