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  n-channel silicon j-fet Datasheet PDF File

For n-channel silicon j-fet Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Part No. MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D
Description TMOS E-FET Power Field Effect Transistor n-channel Enhancement-Mode silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

File Size 240.12K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
Description TMOS E-FET Power Field Effect Transistor n-channel Enhancement-Mode silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D

ON Semiconductor
Motorola, Inc
Part No. MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D
Description TMOS E-FET Power Field Effect Transistor n-channel Enhancement - Mode silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

File Size 219.23K  /  8 Page

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    MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D

ON Semiconductor
Motorola, Inc
Part No. MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D
Description TMOS E-FET Power Field Effect Transistor n-channel Enhancement - Mode silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM

File Size 203.42K  /  8 Page

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    RQJ0202VGDQA RQJ0202VGDQATL-E

Vectron International, Inc.
Renesas Electronics Corporation
Part No. RQJ0202VGDQA RQJ0202VGDQATL-E
Description 2700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3
silicon P Channel MOS FET Power Switching

File Size 83.14K  /  7 Page

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    RQJ0203WGDQA RQJ0203WGDQATL-E

Vectron International, Inc.
Renesas Electronics Corporation
Part No. RQJ0203WGDQA RQJ0203WGDQATL-E
Description 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3
silicon P Channel MOS FET Power Switching

File Size 94.79K  /  7 Page

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    RQJ0602EGDQA RQJ0602EGDQATL-E

Vectron International, Inc.
Renesas Electronics Corporation
Part No. RQJ0602EGDQA RQJ0602EGDQATL-E
Description 1100 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3
silicon P Channel MOS FET Power Switching

File Size 80.99K  /  7 Page

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    3SK298ZP-TL-E

Renesas Electronics Corporation
Part No. 3SK298ZP-TL-E
Description UHF BAND, Si, n-channel, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4
silicon n-channel Dual Gate MOS FET

File Size 182.15K  /  9 Page

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    HITACHI[Hitachi Semiconductor]
Part No. 2SK1215 2SK1215D
Description    silicon n-channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
silicon N Channel MOS FETs

File Size 22.41K  /  4 Page

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    MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100E-D
Description TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, n-channel, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor n-channel Enhancement Mode silicon Gate

File Size 232.49K  /  8 Page

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For n-channel silicon j-fet Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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