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  i-2 Datasheet PDF File

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    2SD1133 2SD1134

HITACHI[Hitachi Semiconductor]
Part No. 2SD1133 2SD1134
OCR Text ...= 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 2SD1133 70 50 5 4 8 40 150 -45 to +150 2SD1134 70 60 5 4 8 40 150 -45 to +15...2 I C = 0.1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 4 V, IC = 1 A*2 VCE = 4 V, IC = 0.5 A*2 Min 70 50 5...
Description Silicon NPN Triple Diffused

File Size 32.05K  /  5 Page

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    2SD1135

HITACHI[Hitachi Semiconductor]
Part No. 2SD1135
OCR Text ...= 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 100 80 5 4 8 40 150 -45 to +150 Unit V V V A A W C C 2SD1135 Ele...2 -- -- Unit V V mA Test conditions I C = 50 mA, RBE = I E = 10 A, IC = 0 VCB = 80 V, IE = 0 ...
Description Silicon NPN Triple Diffused

File Size 31.07K  /  5 Page

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    2SD1137

HITACHI[Hitachi Semiconductor]
Part No. 2SD1137
OCR Text ...pation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C. Tj Tstg 1 Rating...2 2SD1137 Typical Output Characteristecs 10 TC = 25C 8 6 DC Current Transfer Ratio vs. Colle...
Description Silicon NPN Transistor
Silicon NPN Triple Diffused

File Size 30.23K  /  5 Page

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    2SD1138

HITACHI[Hitachi Semiconductor]
Part No. 2SD1138
OCR Text ...pation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C. Tj Tstg 1 Rating 200 150 6 2 5 1.8 30 150 -45 to +150 Unit V V V A A W W C C Electrical Characteristics (Ta = ...
Description Silicon NPN Transistor
Silicon NPN Triple Diffused

File Size 30.91K  /  6 Page

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    2SD1149

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1149
OCR Text ...hFE -- IC 200 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Ta=75C 25C Transition frequency fT (MHz...2 5k 1 20 20 0 1 3 10 30 100 0 0.01 0 0.03 0.1 0.3 1 1 3 10 IC=1mA GV=80dB F...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.00K  /  2 Page

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    2SD1163 2SD1163A

HITACHI[Hitachi Semiconductor]
Part No. 2SD1163 2SD1163A
OCR Text ...= 25C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC * Tj Tstg 1 2SD1163 300 120 6 7 10 20 40 150 -55 to +150 2SD1163A 350 150 6...2.0 1.2 0.5 2SD1163A Min -- -- 150 6 25 -- -- -- Typ -- -- -- -- -- -- -- -- Max -- 5 -- -- -- 1.0 1...
Description Silicon NPN Triple Diffused

File Size 31.45K  /  6 Page

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    2SD1199

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1199
OCR Text ...hFE -- IC 250 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 1500 Transition frequency fT (MHz) 30 100 ...2 1 0 1 3 10 Rg=100k Noise voltage NV (mV) Noise voltage NV (mV) 80 80 60 22k 4...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.38K  /  2 Page

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    2SD1209 2SD1209K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1209 2SD1209K
OCR Text ...: 1. Pulse test Symbol V(BR)CBO I CEO I EBO hFE VCE(sat) VBE(sat) Min 60 -- -- 4000 -- -- Typ -- -- -- -- -- -- Max -- 100 100 -- 1.5 2.0 V V Unit V A A Test conditions I C = 0.1 mA, IE = 0 VCE = 60 V, RBE = VEB = 7 V, IC = 0 VCE = 3 V, IC...
Description Silicon NPN Epitaxial/ Darlington
Silicon NPN Epitaxial, Darlington

File Size 30.18K  /  6 Page

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    2SD1211

Panasonic Semiconductor
Part No. 2SD1211
OCR Text ...IB=10 600 IC/IB=10 400 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MH...2 ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 36.83K  /  2 Page

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    2SD2439

SANKEN[Sanken electric]
Part No. 2SD2439
OCR Text ... 1. 5m A 8 Collector Current I C( A) 1.2 mA 1m A 8 Collector Current I C (A) 2 6 0.8mA 6 IC=10A I C= 7A 1 I C= 5A p) Tem 4 0.6mA 4 e Te se (Cas IB=0.4mA 2 25C 0 0 2 4 6 ...
Description Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

File Size 24.85K  /  1 Page

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