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For high-ghz Found Datasheets File :: 24339 Search Time::2.172ms
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				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text	...2 GHz 0.3 dB Typical at 4 GHz * High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz * Low Parasitic Ceramic Microstrip Package * Tape-and-Reel Packing Option Available Description Hewlett-Packard's ATF-36077 is an ultra...
Description	1.5-18GHz surface mount pseudomorphic HEMT 2-18 GHz Ultra Low Noise Pseudomorphic HEMT
File Size	41.62K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text	...63 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimu...GHz and 0.6 dB at 4 GHz. Additionally, the ATF-36163 has low noise-resistance, which reduces the ...
Description	1.5-18 GHz Surface Mount Pseudomorphic HEMT
File Size	84.64K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-44101
OCR Text	High Output Power: 32.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 8.5 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 35% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package range. This nominally .5 micron ...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	60.35K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45101
OCR Text	High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1dB Compression: 10.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package range. This nominally 0.5 micron...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	40.00K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45171
OCR Text	High Output Power: 29.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package range. This nominally 0.5 micron ...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	39.13K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-46101
OCR Text	High Output Power: 27.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 12.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz gate length GaAs FET is an interdigitated four-cell structure using airbri...
Description	2-10 GHz Medium Power Gallium Arsenide FET
File Size	40.16K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	High Output Power: 27.0 dBm Typical P 1 dB at 4 GHz * High Gain at 1 dB Compression: 11.0 dB Typical G 1 dB at 4 GHz * High Power Efficiency: 38% Typical at 4 GHz * Hermetic Metal-Ceramic Stripline Package range. This nominally 0.5 micro...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				Leshan Radio Company, Ltd. 乐山无线电股份有限公 LRC[Leshan Radio Company]
Part No.	BAP63-03
OCR Text	High speed switching for RF signals * Low diode capacitance * Low diode forward resistance * Very low series inductance * For applications up to 3 GHz. APPLICATIONS * RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD323 sma...
Description	Silicon PIN diode 硅PIN二极
File Size	108.25K / 2 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	BAT14-020D BAT14-050D BAT14-090D BAT14-110D BAT14-D Q62702-D1259 Q62702-D1276 Q62702-D1268 Q62702-D1285 Q62702-D3450 SIEMENSAG-Q62702-D3450
OCR Text	High performance Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-020 D BAT 14-050...GHz BAT 14-020 D f = 6.0 GHz BAT 14-050 D f = 9.3 GHz BAT 14-090 D f = 16 GHz BAT 14-110 D Different...
Description	Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) 硅肖特基二极管（梁式引线技术方面的高性能低中等障碍）
File Size	15.71K / 2 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
Part No.	BAT14-020S BAT14-050S BAT14-090S BAT14-110S BAT14-S Q62702-D1275 Q62702-D1284 Q62702-D1258 Q62702-D1267
OCR Text	High performance Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-020 S BAT 14-050...GHz BAT 14-020 S f = 6.0 GHz BAT 14-050 S f = 9.3 GHz BAT 14-090 S f = 16 GHz BAT 14-110 S Different...
Description	Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier)
File Size	17.04K / 2 Page	View it Online	Download Datasheet

For high-ghz Found Datasheets File :: 24339 Search Time::2.172ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |