...es: 1. The 2SD655 is grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 F 600 to 1200
2
2SD655
Typical Output Charac...v)
Typical Transfer Characteristics 1,000 DC Current Transfer Ratio hFE Collector Current IC (mA)...
...ition frequency Noise voltage
*h
FE
Rank classification
R 210 ~ 340 S 290 ~ 460 T 360 ~ 650 hFE
Rank
1
Transistor
PC -- Ta...v)
Base current IB (mA)
IB -- vBE
800 vCE=5v Ta=25C 700 100 120
IC -- vBE
Collector to em...
Description
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
...ollector output capacitance
*h
FE
Rank classification
P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE
Rank
4.10.2
high collector to...v)
Base to emitter voltage vBE (v)
IC -- IB
Collector to emitter saturation voltage vCE(sat) ...
Description
Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 v, NPN, Si, SMALL SIGNAL TRANSISTOR
...D667 and 2SD667A are grouped by h FE1 as follows. 2. Pulse test B 2SD667 2SD667A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320
...v)
Typical Transfer Characteristics 500 Collector Current IC (mA) 200
5C
DC Current Transfer ...
...D669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B 2SD669 2SD669A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 -...v, 1.5 A) 1.0 (40 v, 0.5 A) 0.3 0.1 0.03 2SD669 0.01 DC Operation(TC = 25C) (120 v, 0.04 A) (160 v, ...
...SD787 and 2SD788 are grouped by h FE as follows. D 250 to 500 E 400 to 800
2
2SD787, 2SD788
Maximum Collector Dissipation Curve Colle...v)
Typical Output Characteristics 2.0 1,000 20 15 Collector Current IC (A) 1.6 10 5 mA Collector ...
...
1. The 2SD789 is grouped by h FE as follows. 400 to 800
2
2SD789
Maximum Collector Dissipation Curve Collector Power Dissipation ...v)
Typical Output Characteristics 2.0
Typical Transfer Characteristics 1,000 300 100 30 10 3 1...
...t capacitance Noise voltage
*h
FE
Rank classification
Rank hFE Q 90 ~ 155 2SD814 2SD814A PQ LQ R 130 ~ 220 PR LR S 185 ~ 330 PS LS...v)
Base to emitter voltage vBE (v)
vCE(sat) -- IC
Collector to emitter saturation voltage vCE...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)