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  field-effect Datasheet PDF File

For field-effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    Micronas Semiconductor Holding AG
Part No. HAL800 HAL800UT-A HAL800UT-K
Description Programmable Linear Hall Effect Sensor 可编程线性霍尔效应传感器
Programmable Linear Hall Effect Sensor MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.80V, RECTANGULAR, THROUGH HOLE MOUNT

File Size 212.78K  /  24 Page

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    2SK3563

Toshiba, Corp.
Toshiba Semiconductor
Part No. 2SK3563
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS) 东芝场效应晶体管频道马鞍山类型(饼马鞍山?)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

File Size 186.69K  /  3 Page

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    INFINEON[Infineon Technologies AG]
Part No. PTF080601F PTF080601E PTF080601A PTF080601
Description LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

File Size 293.07K  /  6 Page

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    AH1803-SNG-7 AH1803-WG-7 AH1803

Diodes, Inc.
Diodes Inc.
Diodes Incorporated
Part No. AH1803-SNG-7 AH1803-WG-7 AH1803
Description MICROPOWER ULTRA-SENSITIVE HALL-EFFECT SENSOR
MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4mT, 0.1-2.8V, RECTANGULAR, SURFACE MOUNT GREEN, SC-59, 3 PIN
MICROPOWER, ULTRA-SENSITIVE HALL EFFECT

File Size 154.78K  /  9 Page

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    IRF530_D ON0283 IRF530-D IRF530/D

Motorola, Inc.
ON Semiconductor
Part No. IRF530_D ON0283 IRF530-D IRF530/D
Description 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 162.84K  /  8 Page

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    Micronas Semiconductor Holding AG
Part No. HAL560 HAL566 HAL560SF-K HAL566SF-K HAL560SF-A HAL566SF-A HAL566UA-A HAL566UA-K HAL560UA-A HAL566UA-E
Description Two-Wire Hall Effect Sensor Family 双线霍尔效应传感器系
Two-Wire Hall Effect Sensor Family MAGNETIC FIELD SENSOR-HALL EFFECT, 46-52mT, RECTANGULAR, THROUGH HOLE MOUNT

File Size 221.20K  /  21 Page

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    UNISONIC TECHNOLOGIES CO LTD
Part No. SK1901L-AE3-R SK1901-G03-K
Description MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, RECTANGULAR, SURFACE MOUNT
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, RECTANGULAR, THROUGH HOLE MOUNT

File Size 166.42K  /  8 Page

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    IRF540_D ON0285 IRF540/D IRF540-D IRF540

Motorola, Inc.
ON Semiconductor
Part No. IRF540_D ON0285 IRF540/D IRF540-D IRF540
Description 27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门))
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 139.23K  /  6 Page

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    IRFF130 IRFF131 IRFF132 IRFF133

General Electric Solid State
GE Solid State
Part No. IRFF130 IRFF131 IRFF132 IRFF133
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER field-effect TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.

File Size 161.86K  /  5 Page

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    FDS9412

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FDS9412
Description    Single N-Channel Enhancement Mode Field Effect Transistor
Single N-Channel Enhancement Mode Field Effect Transistor 7900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 229.41K  /  8 Page

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For field-effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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