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field-effect Datasheet PDF File

For field-effect Found Datasheets File :: 13665 Search Time::1.39ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text	...m arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16 GHz frequency range. Th...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	42.07K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884
OCR Text	...m arsenide Schottkybarrier-gate field effect transistor Electrical Specifications, TA = 25C Symbol GSS NFO GA P1 dB gm IDSS VP Parameters and Test Conditions Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA Optimum Noise Figure: VDS = 3 ...
Description	2-16 GHz General Purpose Gallium Arsenide FET
File Size	39.76K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-44101
OCR Text	... arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters and Test Conditions Pow...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	60.35K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45101
OCR Text	... arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters and Test Conditions Pow...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	40.00K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-45171
OCR Text	... arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters and Test Conditions Pow...
Description	2-8 GHz Medium Power Gallium Arsenide FET
File Size	39.13K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-46101
OCR Text	... arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5 micron Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP ...
Description	2-10 GHz Medium Power Gallium Arsenide FET
File Size	40.16K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-46171
OCR Text	... arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters and Test Conditions Po...
Description	2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
File Size	39.26K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7608-55
OCR Text	...enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protectio...
Description	TrenchMOS transistor Standard level FET
File Size	65.96K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BUK9608-55
OCR Text	...el enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection...
Description	TrenchMOS transistor Logic level FET
File Size	68.11K / 8 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Ramtron International Corp. ETC[ETC] Ramtron International Corporation
Part No.	FM1608-120-P FM1608-120-S FM1608-120 FM1608
OCR Text	...lable! Direct Battery Issues 5. Field maintenance Batteries, no matter how mature, are a built-in maintenance problem. They eventually must be replaced. Despite long life projections, it is impossible to know if any individual battery will ...
Description	CONNECTOR ACCESSORY .050 X .050 MICRO STRIPS 64Kb Bytewide FRAM Memory(64Kb宽字节FRAM存储
File Size	102.78K / 12 Page	View it Online	Download Datasheet

For field-effect Found Datasheets File :: 13665 Search Time::1.39ms
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