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HYNIX SEMICONDUCTOR INC
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| Part No. |
HYM71V16655ALT8M-8
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| OCR Text |
...tion referenced to the positive edge of the clock . all inputs and outputs are synchronized with the rising edge of the clock input. the data paths are internally pipelined to achieve very high bandwidth. features ? pc100mhz support ? 168... |
| Description |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
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| File Size |
233.13K /
14 Page |
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ATMEL CORP
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| Part No. |
AT25DQ321A-53H-B
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| OCR Text |
...always latched in on the rising edge of sck, while output data on the so pin or i/o pins is always clocked out on the falling edge of sck. - input si (i/o 0 ) serial input (i/o 0 ): the si pin is used to shift data into the device. the si p... |
| Description |
FLASH 2.7V PROM, PDSO16
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| File Size |
2,507.33K /
61 Page |
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it Online |
Download Datasheet |
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ALLIANCE SEMICONDUCTOR CORP
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| Part No. |
AS7C33256NTD18A-183TQC
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| OCR Text |
...to the device on the same clock edge. if a read command follows this wr ite command, the system must wait for two 'dead' cycles for val id data to become available. these dead cycles can significantly reduce ov erall bandwidth for applicati... |
| Description |
256K X 18 ZBT SRAM, 9 ns, PQFP100
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| File Size |
235.40K /
10 Page |
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LSI CORP
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| Part No. |
AGR19030EF
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| OCR Text |
... for mobile communication (gsm/edge), time division multiple access (tdma), and single-carrier or multicarrier class ab power amplifier applications. figure 1. agr19030ef (flanged) package n-cdma features typical 2 carrier n-cdma perfor... |
| Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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| File Size |
179.87K /
11 Page |
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it Online |
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