|
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
Part No. |
KBE00S009M-D411 KBE00S009M-D4110
|
OCR Text |
...tory initial issue. - 2gb nand ddp m-die_ ver 0.0 - 512mb m-sdr ddp f-die_ver 1.0 <common> - changed operating voltage : page 3 <nand flash> .... ver 0.2 - changed the technical note : page 15,16 - finalize draft date ma... |
Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2 SPECIALTY MEMORY CIRCUIT, PBGA137
|
File Size |
1,908.72K /
86 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Electronic
|
Part No. |
KBE00S003M KBE00S003M-D411
|
OCR Text |
...tory initial issue. - 2gb nand ddp m-die_ver 0.0 - 512mb m-sdr ddp f-die_ver 1.0 <common> - changed operating voltage : page 3 <nand flash... |
Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
File Size |
1,809.86K /
86 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Electronic
|
Part No. |
KBE00S009M-D411
|
OCR Text |
...tory initial issue. - 2gb nand ddp m-die_ ver 0.0 - 512mb m-sdr ddp f-die_ver 1.0 <common> - changed operating voltage : page 3 <nand flash> .... ver 0.2 - changed the technical note : page 15,16 - finalize draft date ma... |
Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
|
File Size |
1,899.39K /
86 Page |
View
it Online |
Download Datasheet |
|
|
|
Microchip
|
Part No. |
PIC16F57
|
OCR Text |
...y after each pulse at v dd = v ddp : where v ddp = v dd range required during pro- gramming (4.75v - 5.25v). a) programming condition: v pp = 13.0v to 13.25v v dd = v ddp = 4.75v - 5.25v v pp must be 3 v dd + 7.25v to keep progr... |
Description |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single-word instructions) FLASH-based 8-bit microcontroller packs Microchip’s powerful PICmicroarchitecture into a 28-pin package. Easily adapted for
|
File Size |
161.45K /
16 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|