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  charge-management Datasheet PDF File

For charge-management Found Datasheets File :: 9571    Search Time::1.187ms    
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    CM100DY-28H

POWEREX[Powerex Power Semiconductors]
Part No. CM100DY-28H
OCR Text ...VGE = 15V, Tj = 125C Total Gate Charge VCC = 800V, IC = 100A, VGE = 15V * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Min. - - 5.0 - - - Typ. - - 6.5 3.1 2.95 510 Max. 1.0 0....
Description Dual IGBTMOD 100 Amperes/1400 Volts

File Size 67.61K  /  4 Page

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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text ...VGE = 15V, Tj = 125C Total Gate Charge VCC = 800V, IC = 150A, VGE = 15V * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Min. - - 5.0 - - - Typ. - - 6.5 3.1 2.95 765 Max. 1.0 0....
Description Dual IGBTMOD 150 Amperes/1400 Volts

File Size 69.57K  /  4 Page

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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text ...VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 1020 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.59K  /  4 Page

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text ...VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 300A, VGE = 15V IE = 300A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 1530 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.35K  /  4 Page

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text ...VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 255 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ** ...
Description IGBT Modules:1400V
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 48.00K  /  4 Page

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text ...VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 383 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ** ...
Description HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V

File Size 47.54K  /  4 Page

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    FDW2501NZ

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2501NZ
OCR Text ...e Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 10 V, V GS = 4.5 V, ID = 1 A, RGEN = 6 10 20 31 16 20 40 60 30 19 ns ns ns ns nC nC nC V DS = 10 V, V GS = 4.5 V ID = 6.0 A, 13.3 3....
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET

File Size 91.09K  /  6 Page

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    FDW2501N

Fairchild Semiconductor
Part No. FDW2501N
OCR Text ...e Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 10 20 31 16 20 40 60 30 19 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 6.0 A, 13.3 3.0 3....
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET

File Size 454.80K  /  6 Page

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    FDW2502PZ

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2502PZ
OCR Text ...e Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 12 V DD = -10 V, V GS = -4.5 V, ID = -1 A, RGEN = 6 19 60 37 V DS = -5 V, V GS = -4.5 V ID = -4.4 A, 14 3.0 3.9 25 40 100 70 20 ns ns ns ns nC nC nC Dr...
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET

File Size 86.05K  /  6 Page

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    FDW2502 FDW2502P

FAIRCHILD[Fairchild Semiconductor]
Part No. FDW2502 FDW2502P
OCR Text ...e Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 12 VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 19 60 37 14 VDS = -5 V, VGS = -4.5 V ID = -4.4 A, 3.0 3.9 25 40 100 70 20 ns ns ns ns nC nC nC Drain-...
Description    Dual P-Channel 2.5V Specified PowerTrench MOSFET

File Size 449.42K  /  6 Page

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For charge-management Found Datasheets File :: 9571    Search Time::1.187ms    
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