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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SWC1N70C SW1N70C
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| OCR Text |
.... l = 95mh, i as = 0.8a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 0.8a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. ... |
| Description |
N-channel MOSFET
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| File Size |
672.51K /
7 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK16KM-5
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| OCR Text |
...ICS (TYPICAL) 40 TC = 25C VDS = 50v Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 100 7 5 3 2 10-1
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C
DRAIN CURRENT ID (A)
32
24
16
8
0
... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
53.88K /
5 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK16KM-5
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| OCR Text |
...ICS (TYPICAL) 40 TC = 25C VDS = 50v Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 100 7 5 3 2 10-1
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C
DRAIN CURRENT ID (A)
32
24
16
8
0
... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
59.70K /
5 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FK16KM-6
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| OCR Text |
...ICS (TYPICAL) 40 TC = 25C VDS = 50v Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C 3 2 100 7 5 3 2 10-1 0 10 23 5 7 101
DRAIN CURRENT ID (A)
24
16
8
FORWARD TRANSFER ADMITTANCE ... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
55.58K /
5 Page |
View
it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK16KM-6
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| OCR Text |
...ICS (TYPICAL) 40 TC = 25C VDS = 50v Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C 3 2 100 7 5 3 2 10-1 0 10 23 5 7 101
DRAIN CURRENT ID (A)
24
16
8
FORWARD TRANSFER ADMITTANCE ... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
61.44K /
5 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPI08N80C3
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| OCR Text |
...gy, single pulse
ID=1.6A, VDD =50v
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=8a, VDD=50v
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C... |
| Description |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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| File Size |
267.87K /
13 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FK16SM-5
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| OCR Text |
...ICS (TYPICAL) 40 TC = 25C VDS = 50v Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
32
101 7 5 3 2 100 7 5 3 2
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 25C 75C 125C
24
16
8
0
... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
59.48K /
5 Page |
View
it Online |
Download Datasheet |
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CET
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| Part No. |
CEB02N6A CEI02N6A CEF02N6A CEP02N6A
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| OCR Text |
...250A VGS = 10V, ID = 0.8a VDS = 50v, ID = 0.8a 2 5.8 0.8 176 48 21 11 16 28 16 15 2.4 8.7 1.5 1.5 27 40 35 40 21 Min 650 25 100 -100 4 7.5 Typ Max Units V
A
4
nA nA V S pF pF pF ns ns ns ns nC nC nC A V
VDS = 25V, VGS = 0V, f = 1... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
126.50K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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