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  50mw Datasheet PDF File

For 50mw Found Datasheets File :: 1035    Search Time::1.125ms    
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    TDA2004 TDA2004A

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. TDA2004 TDA2004A
OCR Text ... = 1KHz VS = 14.4V; RL = 4 PO = 50mw to 4W VS = 14.4V; RL = 2 PO = 50mw to 6W VS = 13.2V; RL = 3.2 PO = 50mw to 3W VS = 13.2V; RL = 1.6 PO = 50mw to 6W VS = 14.4V VO = 4Vrms RL = 4 f = 1KHz f = 10KHz R g = 5K Test Condition Min. 8 6.6 6.0 7...
Description 10 10W STEREO AMPLIFIER FOR CAR RADIO
10 10W STEREO AMPLIFIER FOR CAR RADIO
10 10W STEREO AMPLIFIER FOR CAR RADIO

File Size 156.20K  /  10 Page

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    SANYO
Part No. DL-6140-201
OCR Text ...iew DL-6140-201 is high power (50mw) 785nm laser diode. DL-6140-201 is suitable for CD-R. Package Dimensions 0 o5.6--0.025 o4.4 o3.550.1 o1.6 Effective window diameter 1.0min. Tolerance : 0.2 Unit : mm Features *High power : 50 mW...
Description Infrared Laser Diode High Power Laser Diode

File Size 52.11K  /  3 Page

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    SAV-36

Toshiba Semiconductor
Part No. SAV-36
OCR Text ...ION VGG =0V, Pi =0mW VGG5V, Pi =50mw, Po60W VDD12.5V, Pi =50mw VDD12.5V, Pi =50mw VDD12.5V, VGG5V 12.5V< VDD16.5V, VGG5V, Pi =50mw VGG5V RATING 16.5 16.5 5.5 15 100 90 -30~100 -40~110 UNIT V V V A mW W Caution: This maximum rating give...
Description FM RF Power Amplifier Module

File Size 171.34K  /  4 Page

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    RA45H4452M-01 RA45H4452M-E01 RA45H4452M

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA45H4452M-01 RA45H4452M-E01 RA45H4452M
OCR Text ... T>35% @ VDD=12.5V, VGG=5V, Pin=50mw * Broadband Frequency Range: 440-520MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the...
Description 440-520MHZ 45W 12.5V MOBILE RADIO

File Size 91.37K  /  9 Page

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    RA45H4045MR RA45H4045MR-101

http://
Mitsubishi Electric Semiconductor
Part No. RA45H4045MR RA45H4045MR-101
OCR Text ... T>35% @ VDD=12.5V, VGG=5V, Pin=50mw * Broadband Frequency Range: 400-450MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Reverse PIN type * Linear operation is possible by setting the quiescent dra...
Description 400-450MHZ 45W 12.5V, 3 STAGE AMP. FOR MOBILE RADIO

File Size 93.42K  /  8 Page

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    RA60H1317M RA60H1317M-01 RA60H1317M-E01

Mitsubishi Electric Semiconductor
Part No. RA60H1317M RA60H1317M-01 RA60H1317M-E01
OCR Text ... T>40% @ VDD=12.5V, VGG=5V, Pin=50mw * Broadband Frequency Range: 135-175MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear operation is possible by setting the quiescent drain current with the...
Description 135-175MHz 60W 12.5V MOBILE RADIO

File Size 57.64K  /  9 Page

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    RA07M3843M RA07M3843M-101

Mitsubishi Electric Semiconductor
Part No. RA07M3843M RA07M3843M-101
OCR Text ...ut>7W @ VDD=7.2V, VGG=3.5V, Pin=50mw * T>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mw * Broadband Frequency Range: 378-430MHz * Low-Power Control Current IGG=1mA (typ) at VGG=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is p...
Description ROHS COMPLIANCE , 378-430MHZ 7W 7.2V, 2STAGE AMP. FOR PORTABLE RADIO

File Size 94.61K  /  8 Page

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    RA07M3340M RA07M3340M-E01 RA07M3340M-01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA07M3340M RA07M3340M-E01 RA07M3340M-01
OCR Text ...ut>7W @ VDD=7.2V, VGG=3.5V, Pin=50mw * T>40% @ Pout=6.5W (V GG control), VDD=7.2V, Pin=50mw * Broadband Frequency Range: 330-400MHz * Low-Power Control Current IGG=1mA (typ) at VGG=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is ...
Description MITSUBISHI RF MOSFET MODULE 三菱射频MOSFET模块

File Size 66.40K  /  9 Page

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For 50mw Found Datasheets File :: 1035    Search Time::1.125ms    
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