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  5.0-9.0 Datasheet PDF File

For 5.0-9.0 Found Datasheets File :: 516783    Search Time::14.735ms    
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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ....2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ... Absolute Maximum Ratings +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cu...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ...=25C) Ratings 800 800 500 8 10 5 3 40 2 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pa...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 61.01K  /  3 Page

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    2SC5036 2SC5036A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5036 2SC5036A
OCR Text ...5C PC Tj Tstg 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 emitter voltage 2SC5036A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current C...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.72K  /  3 Page

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    2SC5037 2SC5037A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5037 2SC5037A
OCR Text ...Ratings 900 1000 900 1000 800 7 5 3 1 40 2 150 -55 to +150 Unit V 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Collector to...0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 emitter voltage...
Description Silicon NPN triple diffusion planar type

File Size 62.18K  /  3 Page

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    2SC5049

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Toshiba Semiconductor
Part No. 2SC5049
OCR Text ...BO IC PC Tj Tstg Ratings 15 8 1.5 20 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutof...0 12.0 -- Typ -- -- -- 120 0.45 10.0 15.0 1.2 Max 10 1 10 250 0.8 -- -- 2.5 pF GHz dB dB Unit A mA A...
Description Silicon NPN Epitaxial npn型硅外延

File Size 23.39K  /  5 Page

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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ...BO IC PC Tj Tstg Ratings 15 8 1.5 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to ba...0 -- 11.0 -- Typ -- -- -- -- 120 0.6 11.0 13.5 14.0 1.1 Max -- 10 1 10 250 1.1 -- -- -- 2.0 pF GHz d...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ... gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector ...0 -- 11.5 -- Typ -- -- -- -- 120 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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    2SC5060 2SC5060TV2M

Rohm CO.,LTD.
Part No. 2SC5060 2SC5060TV2M
OCR Text ...ction for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0.45 ...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...ternal Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A ...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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