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International Business Machines, Corp.
IBM Microeletronics
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| Part No. |
IBM11N4845BB IBM11N4845CB
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| OCR Text |
... applications. the dimm uses 18 4mx4 edo drams in soj packages along with an asic and check bit drams to provide an sec ecc system with transparent chip kill protection. the dimms use serial presence detects implemented via a serial eeprom ... |
| Description |
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 带纠错代码保护的小外形双列直插动态RAM模块) 4米72片，杀死保护ECC的上内存模块米72带纠错代码保护的小外形双列直插动态内存模块）
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 甯????唬????ょ?灏??褰㈠?????????AM妯″?)
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| File Size |
335.99K /
29 Page |
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International Business Machines, Corp.
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| Part No. |
IBM11M4730CB
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| OCR Text |
...pplications. these dimms use 18 4mx4 drams in soj or tsop packages. improved system performance is provided by the on-dimm buffering of selected input signals. the specified timings include all buffer, net and skew delays, which simplifies ... |
| Description |
4M x 72 DRAM Module(4M x 72 动态RAM模块) 4米72内存米72动态内存模块）
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| File Size |
336.65K /
27 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
K4F160412D K4F160411D-BL50
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| OCR Text |
...s available in l-version. this 4mx4 fast page mode dram family is fabricated using samsung s advanced cmos process to realize high band-width, low power consumption and high reliability. it may be used as main memory for high level comput... |
| Description |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
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| File Size |
227.69K /
20 Page |
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ST Microelectronics
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| Part No. |
ELITE STPCELITE STPCE1EDBC STPCE1EDBI
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| OCR Text |
...6 16mbits 2mx64 8 2mx8 4mx64 16 4mx4 4mx64 4 2mx16x2 64mbits 8mx64 8 4mx8x2 16mx64 16 8mx4x2 4mx64 4 1mx16x4 8mx64 8 2mx8x4 32mx64 16 4mx4x4 16mx64 8 2mx16x2 128mbits 32mx64 16 4mx8x4
general description 6/87 release 1.3 - januar y 29, 2... |
| Description |
STPC ELITE DATASHEET / X86 CORE GENERAL PURPOSE PC COMPATIBLE SYSTEM ON CHIP
X86 Core General Purpose PC Compatible System - on - Chip
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| File Size |
1,360.11K /
87 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM5364005BSW
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| OCR Text |
4mx4, 4k refresh, 5v the samsung kmm5364005b is a 4mx36bits dynamic ram high density memory module. the samsung kmm5364005b consists of two cmos 4mx16bits and one cmos quad cas 4mx4bits drams in tsop packages mounted on a 72-pin glass-epo... |
| Description |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）
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| File Size |
375.73K /
19 Page |
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Air Cost Control
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| Part No. |
IC41SV44054-100T
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| OCR Text |
4mx4 bit dynamic ram with fast page mode revision history revision no history draft date remark 0a initial draft june 14,2002 preliminary 0b chang working range from v cc =1.9v~2.4v july 31,2002 to v cc =1.9v~2.7v, v ih =1.4v to v ... |
| Description |
4mx4 bit Dynamic RAM with Fast Page Mode 4mx4位动态RAM的快速页面模
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| File Size |
239.62K /
17 Page |
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Alliance Semiconductor, Corp.
HIROSE ELECTRIC Co., Ltd.
ITT, Corp.
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| Part No. |
IC41LV44002AS-50T IC41C44002ASL-60J IC41C44002AS-60J
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| OCR Text |
...c41lv44002as(l) document title 4mx4 bit dynamic ram with edo page mode revision history revision no history draft date remark 0a initial draft september 4,2001 the attached datasheets are provided by icsi. integrated circuit solu... |
| Description |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 4米46兆）动态与江户页面模式内存
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| File Size |
250.72K /
20 Page |
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Bourns, Inc.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K4E170411D K4E160411D
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| OCR Text |
...is available in l-version. this 4mx4 edo dram family is fabricated using samsung s advanced cmos process to realize high band-width, low power consumption and high reliability. it may be used as main memory unit for high level computer, mi... |
| Description |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
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| File Size |
259.16K /
21 Page |
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