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For 4-ch Found Datasheets File :: 29763    Search Time::1.5ms    
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    2SK1165 2SK1166

HITACHI[Hitachi Semiconductor]
Part No. 2SK1165 2SK1166
OCR Text ... Test 12 5.0 V 12 8 4.5 V 4 VGS = 4 V 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 8 75C -25C TC = 25C 4 0 4 2 6...ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM PW 1 D = PW T 0.03 1S 0.01 10 lse t ...
Description Silicon N-Channel MOS FET

File Size 49.04K  /  9 Page

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    2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160

HITACHI[Hitachi Semiconductor]
Part No. 2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160
OCR Text ...Drain Current ID (A) 12 8 4.5 V 4 VGS = 4V 0 4 8 12 20 16 Drain to Source Voltage VDS (V) 8 4 75C -25C TC = 25C 0 2 4 6 8 Gat...ch-c (t) = S(t) * ch-c ch-c = 1.25C/W,TC = 25C PDM D = PW T PW T 100 m 1 10 Switching Time Test C...
Description Silicon N-Channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1169 2SK1170

HITACHI[Hitachi Semiconductor]
Part No. 2SK1169 2SK1170
OCR Text ...A) 30 12 20 5V 8 4 75C -25C TC = 25C 10 VGS = 4 V 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 0 2 4 6 8 10 Gate...ch-c (t) = S (t) * ch-c ch-c = 1.04C/W,TC = 25C PDM D = PW T PW T 100 1m 10 m Pulse Width PW (s) 10...
Description Silicon N-Channel MOS FET

File Size 48.20K  /  9 Page

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    TOSHIBA
Part No. TK72A12N1
OCR Text ...nhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal ci...ch t stg rating 120 20 179 72 355 45 256 72 150 -55 to 150 unit v a w mj a note: using continuous...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 234.31K  /  9 Page

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    TPC6067

Toshiba Semiconductor
Part No. TPC6067
OCR Text ... = 10 a (max) (v ds = 30 v) (4) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.1 ma) 3. 3. 3. 3. packaging and intern...ch t stg rating 30 20 6 24 2.2 0.7 28 6 150 -55 to 150 unit v a w w mj a note: using continuous...
Description Lithium-Ion Secondary Batteries Power Management Switches

File Size 226.31K  /  9 Page

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    TK72A12N1

Toshiba Semiconductor
Part No. TK72A12N1
OCR Text ...nhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal ci...ch t stg rating 120 20 179 72 355 45 256 72 150 -55 to 150 unit v a w mj a note: using continuous...
Description Switching Voltage Regulators
MOSFETs Silicon N-channel MOS (U-MOS?H)

File Size 234.69K  /  9 Page

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    SSRF06N60SL

SeCoS Halbleitertechnologie GmbH
Part No. SSRF06N60SL
OCR Text ... / w notes: 1. l=30mh,i as =4.4a, v dd =105v, r g =25 , starting t j =25c 1 gate 3 source 2 drain a m j k l l g f b...ch enhancement mode power mosfet 25-sep-2013 rev. a page 2 of 5 http://www.secosgmbh.com/...
Description N-Ch Enhancement Mode Power MOSFET

File Size 580.86K  /  5 Page

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    2SK2002-01MR

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2SK2002-01MR
OCR Text ...f N-channel MOS-FET 600V 4,5 3A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General P...ch T stg Rating 600 600 3 12 30 30 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - ...
Description N-channel MOS-FET

File Size 211.39K  /  2 Page

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    2SK2003-01MR

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2003-01MR
OCR Text ... N-channel MOS-FET 600V 2,4 4A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Pur...ch T stg Rating 600 600 4 16 30 40 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - ...
Description N-channel MOS-FET

File Size 200.13K  /  2 Page

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    2SK2004-01L 2SK2004-01S

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2004-01L 2SK2004-01S
OCR Text ... PD T ch T stg Rating 1000 1000 4 16 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Ga...
Description N-channel MOS-FET

File Size 218.14K  /  2 Page

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