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  30v Datasheet PDF File

For 30v Found Datasheets File :: 33508    Search Time::2.891ms    
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    TSC[Taiwan Semiconductor Company, Ltd]
Taiwan Semiconductor Co., Ltd.
Part No. TS79M24CZ TS79M00 TS79M05 TS79M05CP TS79M05CZ TS79M06 TS79M06CP TS79M06CZ TS79M08 TS79M08CP TS79M08CZ TS79M09 TS79M09CP TS79M09CZ TS79M12 TS79M12CP TS79M12CZ TS79M15 TS79M15CP TS79M15CZ TS79M18 TS79M18CP TS79M18CZ TS79M24 TS79M24CP
OCR Text ... 5mAIout350mA, PD 5W -14.5VVin -30v, Io=200mA 5mAIout500mA 0mAIout200mA Min - 11.53 - 11.42 ------- Typ - 12 - 12 8 25 10 4 --70 60 2 0.7 -0.8 Max - 12.48 - 12.60 50 Unit V Vout Line Regulation Load Regulation Quiescen...
Description Analog IC: Voltage Regulators
3-Terminal Medium Current Negative Voltage Regulator 三端中电流负电压稳压
Cleaning Wipes; Dispensing Method:Swab; Pack Quantity:10; Body Material:self-saturating foam; External Depth:4.5" RoHS Compliant: Yes

File Size 166.46K  /  7 Page

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    2SJ400

SANYO[Sanyo Semicon Device]
Part No. 2SJ400
OCR Text ...-1mA, VGS=0 IG=100A, VDS=0 VDS=-30v, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-18A ID=-18A, VGS=-10V ID=-18A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See sp...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.78K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. RF1K4922396 RF1K49223
OCR Text 30v, 0.150 Ohm, Dual P-Channel LittleFETTM Power MOSFET The RF1K49223 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives...
Description 2.5A, 30v, 0.150 Ohm, Dual P-Channel LittleFET?/a> Power MOSFET
2.5A, 30v, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, -30v, 0.150 Ohm, Dual P-Channel LittleFET PowerMOSFET
2.5A, 30v, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
2.5A, 30v, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET

File Size 232.95K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. RF1K49156
OCR Text 30v, 0.030 Ohm, Logic Level, Single N-Channel LittleFETTM Power MOSFET This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuit...
Description    6.3A, 30v, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET
874271042

File Size 220.25K  /  8 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. TSM106IDT TSM106 TSM106ID
OCR Text ...oad Tmin. < Tamb < Tmax. Vcc+ = 30v, no load Tmin. < Tamb < Tmax Min. Typ. 2.5 5.5 Max. 4.5 6 8.5 10 Unit ICC mA Table 3: Electrical characteristics for operator 2 (independant op-amp): VCC+ = +5V, VCC = Ground, Vo = 1.4V,Tamb = 25...
Description From old datasheet system
Dual Operational Amplifier and Voltage Reference

File Size 46.55K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. RC2951 RC2951X33
OCR Text ... to +150C -55 to +150C -0.3 to +30v -1.5 to +30v -0.3 to +30v -0.3 to +30v Notes: 1. Junction to ambient thermal resistance for the S.O. (M) package is 160C/W. 2 May exceed input supply voltage. 3. When used in dual-supply systems where ...
Description Adjustable Micropower Voltage Regulator

File Size 102.11K  /  11 Page

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    PMN35EN

NXP Semiconductors
Part No. PMN35EN
OCR Text ...drain-source voltage t j =25c --30v v gs gate-source voltage -20 - 20 v i d drain current v gs =10v; t amb =25c [1] --5.1a static characteristics r dson drain-source on-state resistance v gs =10v; i d =5.1a; t j = 25 c - 25 31 m ? table 2....
Description 30 V, 5.1 A N-channel Trench MOSFET

File Size 801.36K  /  15 Page

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    2SJ466

SANYO[Sanyo Semicon Device]
Part No. 2SJ466
OCR Text ...-1mA, VGS=0 IG=100A, VDS=0 VDS=-30v, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-18A ID=-18A, VGS=-10V ID=-18A, VGS=-4V -1.0 16 27 20 30 30 40 Conditions Ratings min -30 20 -100 10 -2.0 typ max Unit V V A A V S m m Continued on ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 38.71K  /  4 Page

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    PMDPB56XN

NXP Semiconductors
Part No. PMDPB56XN
OCR Text ...drain-source voltage t j =25c --30v v gs gate-source voltage -12 - 12 v i d drain current v gs =4.5v; t amb =25c; t 5 s [1] --4a static characteristics (per transistor) r dson drain-source on-state resistance v gs =4.5v; i d = 3.1 a; t ...
Description MOSFET

File Size 328.87K  /  15 Page

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    TSC[Taiwan Semiconductor Company, Ltd]
Part No. TSM3400CX TSM3400
OCR Text 30v N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 30v RDS (on), Vgs @ 4.5V, Ids @ 2A =70m RDS (on), Vgs @ 10V, Ids @ 3.5A =50m Features Rugged and reliable High density cell design for ultra low ...
Description 30v N-Channel Enhancement Mode MOSFET

File Size 203.92K  /  5 Page

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