20v pdf Datasheet P14 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MRF454 TSA55 GN125 2W2D0 V358ID MN2400 C3387 NJM2257
	Product Description
	Full Text Search

20v Datasheet PDF File

For 20v Found Datasheets File :: 43316 Search Time::1.703ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	...=320v VGS = 0V, TJ = 125C VGS = 20v VGS = -20v VGS = 10V, ID =25A VDS = 200V VDD =200V, ID =25A, RG =2.35 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Thre...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	..., VGS = 0V, TJ = 150C 200 VGS = 20v nA -200 VGS = -20v Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-S...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	...HEXFET(R) Power MOSFET VDSS 20v RDS(on) max 9.0m ID 77A High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l l Very Low RDS(on) Fully Characterized Avalanche Voltage and Cur...
Description	20v Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20v Single N-Channel HEXFET Power MOSFET in a TO-262 package 20v Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20v, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20v, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20v Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20v, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20v/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20v的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20v V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	... Power Benefits l l l VDSS 20v RDS(on) max 8.5m ID 77A Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRF3706 D2Pak IRF3706S TO-262 IRF3706L Absol...
Description	Power MOSFET(Vdss=20v/ Rds(on)max=8.5mohm/ Id=77A) Power MOSFET(Vdss=20v, Rds(on)max=8.5mohm, Id=77A) Power MOSFET(Vdss=20v Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2MBI300S-120
OCR Text	...s VGE=0V, VCE=1200V VCE=0V, VGE=20v VCE=20v, IC=300mA Tc=25 C VGE=15V, IC=300A Tc=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=300A VGE=15V RG=2.7 ohm Tj=25C Tj=125C IF=300A IF=300A, VGE=0V Unit mA A V V pF s Turn-off time Forward on voltag...
Description	1200V / 300A 2 in one-package
File Size	849.74K / 4 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2MBI200U4H-120
OCR Text	...ons VCE=1200V VGE=0V VCE=0V VGE=20v VCE=20v Ic=200mA Ic=200A VGE=15V min. 4.5 o o Characteristics typ. max. 6.5 a a Units mA nA V 2.0 400 8.5 a Tj=25 C o Tj=125 C o Tj=25 C Tj=125oC VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=200A V...
Description	IGBT MODULE
File Size	429.97K / 13 Page	View it Online	Download Datasheet

				Nihon Inter Electronics Corporation
Part No.	PDMB75E6
OCR Text	...e-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 75a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 75ma . . ...
Description	IGBT Module-Dual
File Size	241.44K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	..., VGS = 0V, TJ = 150C 100 VGS = 20v nA -100 VGS = -20v 190 ID = 28A 26 nC VDS = 80V 82 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- RD = 1.7, See Fig. 10 Between lead, nH --- and center of die contact --- VG...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	..., VGS = 0V, TJ = 150C 100 VGS = 20v nA -100 VGS = -20v 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

For 20v Found Datasheets File :: 43316 Search Time::1.703ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |