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100v 4a Datasheet PDF File

For 100v 4a Found Datasheets File :: 1882 Search Time::0.984ms
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				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SK2563
OCR Text	...Load 10 IAS = 4a VDD = 100v VGS = 15V 0V Rg = 70 EAR = 11mJ EAS = 110mJ Single Avalanche Current IAS [A] 1 0.1 0.1 1 10 100 Inductance L [mH] 2SK2563 100 Power Derating 80 Power Derating [%] ...
Description	VX-2 Series Power MOSFET(600V4a)
File Size	391.21K / 12 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXTP2027FTA ZXTN2018F ZXTP2027F
OCR Text	100v, V(BR)CEO > -60V IC(cont) = -4a RCE(sat) = 31 m PD = 1.2W Complementary part number: ZXTN2018F typical VCE(sat) < -60 mV @ -1A Description Advanced process capability and package design have been used to maximize the power handling...
Description	60V, SOT23, PNP medium power transistor
File Size	493.33K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFU3911 IRFR3911
OCR Text	... IRFU3911 (R) ID 14a VDSS 100v RDS(on) max 0.115 Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Charact...4a 4.0 V VDS = VGS, ID = 250A 20 VDS = 100v, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS ...
Description	SMPS MOSFET 100v Single N-Channel HEXFET Power MOSFET in a D-Pak package HEXFET? Power MOSFET 100v Single N-Channel HEXFET Power MOSFET in a I-Pak package
File Size	101.32K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7495PBF
OCR Text	100v RDS(on) max 22m @VGS = 10V : ID 7.3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized...4a V/C Reference to 25C, ID = 1mA f VDS = VGS, ID = 250A VDS = 100v, VGS = 0V VDS = 80V, VG...
Description	HEXFET?Power MOSFET HEXFET㈢Power MOSFET
File Size	144.02K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IPL60R1K5C6S
OCR Text	...iss - 200 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 16 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitan...4a, r g =12.2 w rise time t r - 7 - ns v dd =400v, v gs =10v, i d =1.4a, r g =12.2 w turn-off dela...
Description	Very high commutation ruggedness
File Size	1,335.74K / 14 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STN2NF1007 STN2NF10
OCR Text	100v - 0.23 - 2.4a - SOT-223 STripFETTM II Power MOSFET Features Type STN2NF10 VDSS 100v RDS(on) < 0.26 ID 2.4a 2 Description 1 2 3 This Power MOSFET is the latest development of STMicroelectronics unique "single feature siz...
Description	N-channel 100v - 0.23ヘ - 2.4a - SOT-223 STripFET⑩ II Power MOSFET N-channel 100v - 0.23Ω - 2.4a - SOT-223 STripFET II Power MOSFET
File Size	229.03K / 13 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	BDY73
OCR Text	...ollector cutoff current v ce = 100v; v be(off) = 1.5v v ce = 100v; v be(off) = 1.5v,t c =150 1.0 5.0 ma i ebo emitter cutoff curren...4a; v ce = 4v 50 150 i s/b second breakdown collector current with base forward biased v ...
Description	isc Silicon NPN Power Transistor
File Size	49.50K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IPD60R1K5CE IPU60R1K5CE
OCR Text	...iss - 200 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 16 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitan...4a, r g =12.2 w ;seetable10 rise time t r - 7 - ns v dd =400v, v gs =10v, i d =1.4a, r g =12.2 ...
Description	Very high commutation ruggedness Very high commutation ruggedness
File Size	2,308.97K / 16 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOTF4N90
OCR Text	...e i f =4a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =450v, i d =4a, r g =25 w gate resistance ...
Description	900V,4a N-Channel MOSFET
File Size	363.88K / 5 Page	View it Online	Download Datasheet

				Korea Electronics (KEC)
Part No.	KTA1038
OCR Text	100v. low collector-emitter saturation voltage. : v ce(sat) =-2.0v(max.) complementary to ktc2018. maximum rating (ta=25 1 ) dim mil...4a 20 - - collector-emitter saturation voltage v ce(sat) i c =-4a, i b =-0.4a - - -2.0 v base-emi...
Description	General Purpose Transistor
File Size	74.69K / 2 Page	View it Online	Download Datasheet

For 100v 4a Found Datasheets File :: 1882 Search Time::0.984ms
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