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  0.13a Datasheet PDF File

For 0.13a Found Datasheets File :: 5357    Search Time::1.766ms    
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    KI1563DH

Guangdong Kexin Industrial Co.,Ltd
Part No. KI1563DH
OCR Text 0.1 -0.1 Unit: mm 0.65 0.525 Features Fast Switching +0.15 2.3-0.15 0.36 Absolute Maximum Ratings TA = 25 Parameter Drain...13A VGS = -4.5 V, ID = -0.88A Drain Source On State Resistance* rDS(on) VGS = 2.5 V, ID = 0.99A VGS ...
Description Complementary 20-V (D-S) Low-Threshold MOSFET

File Size 54.81K  /  2 Page

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    KI1563EDH

Guangdong Kexin Industrial Co.,Ltd
Part No. KI1563EDH
OCR Text 0.1 1.3-0.1 0.65 Unit: mm Features TrenchFET Power MOSFETs +0.1 0.3-0.1 +0.1 2.1-0.1 +0.15 2.3-0.15 0.525 0.36 +0.05 0.1-0...13A VGS = -4.5 V, ID = -0.88A Drain Source On State Resistance* rDS(on) VGS = 2.5 V, ID = 0.99A VGS ...
Description Complementary 20-V (D-S) Low-Threshold MOSFET

File Size 55.99K  /  2 Page

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    NLP70 NLP70-9693

Artesyn Technologies
Part No. NLP70 NLP70-9693
OCR Text ...5A on either 3.3V or 5V 5.5 x 3.0 inch card and 1.26 inch package (1U applications) 3.3V, 5V and 12V triple EN61000-3-2 compliant Overvoltag...13A 13A 0.8A 50mV 50mV 120mV 2.0% 2.0% 5.0% Notes 1 2 3 Free air convection cooling. I5 = ...
Description LOW TO MEDIUM POWER AC/DC POWER SUPPLIES

File Size 52.68K  /  3 Page

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    IRFI1310N IRFI1310NPBF

International Rectifier
Part No. IRFI1310N IRFI1310NPBF
OCR Text 0.036 w i d = 24a l advanced process technology l isolated package l high voltage isolation = 2.5kvrms ? l sink to lead creepage dist. = 4...13a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transco...
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package

File Size 109.62K  /  8 Page

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    CPV364M4KPBF

International Rectifier
Part No. CPV364M4KPBF
OCR Text ...r high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V * Fully isolated printed circuit board mount packag...13A VGE = 15V --- V IC = 24A See Fig. 2, 5 1.73 IC = 13A, T J = 150C 6.0 VCE = VGE, IC = 250A --- mV...
Description IGBT SIP MODULE

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    AO4492L

Alpha & Omega Semicondu...
Alpha & Omega Semiconductors
Part No. AO4492L
OCR Text ...C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=25C TC=70C C C G S Maximum 30 20 13 11 100 20 20 3.1 2 -55 to 150 Uni...13A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance V...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 140.88K  /  6 Page

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    KEC
Part No. 13N60N
OCR Text ...urce on resistance : r ds(on) =0.56(max.) @v gs =10v qg(typ.) =36nc maximum rating (tc=25 ) g d s characteristic symbol rating unit drain-...13a v gs =10v (note4,5) - 36 - nc gate-source charge q gs - 8.5 - gate-drain ...
Description KF13N60N

File Size 84.19K  /  6 Page

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    2SK3112

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SK3112
OCR Text 0.1 1.27-0.1 MOSFET TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Low on-state resistance RDS(on) = 110m MAX. (VGS = 10 V, ID = 13A) Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V) +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0...
Description MOS Field Effect Transistor

File Size 42.06K  /  1 Page

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    IRFP22N60KPBF

International Rectifier
Part No. IRFP22N60KPBF
OCR Text ...nits r jc junction-to-case ??? 0.34 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resista...13a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = v gs , i d = 250a ??? ??? 50 a v ds =...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

File Size 122.54K  /  8 Page

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