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  0.0076 Datasheet PDF File

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    SANYO
Part No. 2SC5991
OCR Text ...nted on a ceramic board (250mm2!0.8mm) Tc=25C Conditions Ratings 100 100 50 6 7 10 1.2 1.3 3.5 150 --55 to +150 Unit V V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC...
Description Low-Saturation Voltage Transistors

File Size 42.68K  /  5 Page

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    2SC5999

Renesas Electronics Corporation
Part No. 2SC5999
OCR Text ...CBO IEBO hFE1 hFE2 VCB=100V, IE=0 VEB=4V, IC=0 VCE=2V, IC=1A VCE=2V, IC=15A 200 150 Conditions Ratings min typ max 10 10 560 Unit A A Continued on next page. Any and all SANYO products described or contained herein do not have specifi...
Description NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

File Size 37.52K  /  4 Page

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD1539A 2SD1539
OCR Text ...2SB1071 and 2SB1071A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching Fu...
Description Silicon NPN epitaxial planar type(For low-voltage switching)

File Size 52.52K  /  3 Page

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    Panasonic
Part No. 2SD1539A
OCR Text ...one screw 16.70.3 Unit: mm 0.70.1 10.00.2 5.50.2 4.20.2 4.20.2 2.70.2 7.50.2 3.10.1 14.00.5 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) E...
Description Power Device - Power Transistors - General-Purpose power amplification

File Size 89.28K  /  5 Page

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    HITACHI[Hitachi Semiconductor]
Part No. 2SK2084S 2SK2084 2SK2084L
OCR Text ...(BR)GSS I GSS Min 20 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra...
Description Power switching MOSFET
Silicon N-Channel MOS FET

File Size 45.98K  /  10 Page

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    Renesas
Part No. 2SK2084S
OCR Text ...(BR)GSS I GSS Min 20 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra...
Description Transistors>Switching/MOSFETs

File Size 88.95K  /  15 Page

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    Panasonic
Part No. 2SK3318
OCR Text 0.7) Unit: mm 15.00.3 11.00.2 5.00.2 (3.2) For switching Features * Avalanche energy capability guaranteed * High-speed switching * Low ON resistance Ron * No secondary breakdown 21.00.5 3.20.1 (3.5) Solder Dip 15.00.2...
Description Power Device - Power MOS FETs

File Size 69.50K  /  4 Page

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    2SK3318

Toshiba Semiconductor
Panasonic Semiconductor
Part No. 2SK3318
OCR Text 0.7) Unit: mm 15.00.3 11.00.2 5.00.2 (3.2) For switching Features * Avalanche energy capability guaranteed * High-speed switching * Low ON resistance Ron * No secondary breakdown 21.00.5 3.20.1 (3.5) Solder Dip 15.00.2...
Description Silicon N-channel power MOSFET

File Size 62.97K  /  3 Page

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    2SK3440

Toshiba Semiconductor
Part No. 2SK3440
OCR Text ...60 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Single...
Description Switching Regulator, DC-DC Converter Applications Motor Drive Applications

File Size 318.95K  /  6 Page

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    2SK3446

Renesas Electronics Corporation
Part No. 2SK3446
OCR Text ...2 Note1 Ratings 150 10 1 4 1 0.9 150 -55 to +150 Unit V V A A A W C C Rev.6, Jan. 2003, page 2 of 10 2SK3446 Electrical Characteristics (Ta = 25C) Item Symbol Min 150 10 -- -- 0.5 -- -- 0.8 -- -- -- -- -- -- -- -- -- -- -- --...
Description Silicon N Channel Power MOS FET Power Switching

File Size 98.63K  /  10 Page

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