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SANYO
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Part No. |
2SC5991
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OCR Text |
...nted on a ceramic board (250mm2!0.8mm) Tc=25C Conditions Ratings 100 100 50 6 7 10 1.2 1.3 3.5 150 --55 to +150 Unit V V V V A A A W W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC... |
Description |
Low-Saturation Voltage Transistors
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File Size |
42.68K /
5 Page |
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http:// PANASONIC[Panasonic Semiconductor]
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Part No. |
2SD1539A 2SD1539
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OCR Text |
...2SB1071 and 2SB1071A
Unit: mm
0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching Fu... |
Description |
Silicon NPN epitaxial planar type(For low-voltage switching)
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File Size |
52.52K /
3 Page |
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Panasonic
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Part No. |
2SD1539A
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OCR Text |
...one screw
16.70.3
Unit: mm
0.70.1
10.00.2 5.50.2
4.20.2
4.20.2 2.70.2
7.50.2
3.10.1
14.00.5
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) E... |
Description |
Power Device - Power Transistors - General-Purpose power amplification
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File Size |
89.28K /
5 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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Part No. |
2SK2084S 2SK2084 2SK2084L
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OCR Text |
...(BR)GSS I GSS Min 20 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra... |
Description |
Power switching MOSFET Silicon N-Channel MOS FET
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File Size |
45.98K /
10 Page |
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Renesas
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Part No. |
2SK2084S
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OCR Text |
...(BR)GSS I GSS Min 20 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra... |
Description |
Transistors>Switching/MOSFETs
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File Size |
88.95K /
15 Page |
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it Online |
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Panasonic
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Part No. |
2SK3318
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OCR Text |
0.7)
Unit: mm
15.00.3 11.00.2 5.00.2 (3.2)
For switching Features
* Avalanche energy capability guaranteed * High-speed switching * Low ON resistance Ron * No secondary breakdown
21.00.5
3.20.1
(3.5) Solder Dip
15.00.2... |
Description |
Power Device - Power MOS FETs
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File Size |
69.50K /
4 Page |
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it Online |
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Price and Availability
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