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ELAN Microelctronics Corp .
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| Part No. |
VN10K
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| OCR Text |
... t c = 25 c c/w c/w to-92 0.31a 1.0a 1.0w 125 170 0.31a 1.0a notes: 1. i d (continuous) is limited by max rated t j . 2. vn0106n3 can be used if an i d (continuous) of 0.5 is needed. thermal characteristics electrical characteristics ... |
| Description |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压60V,N沟道增强型垂直DMOS结构场效应管)
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| File Size |
28.74K /
4 Page |
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Infineon
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| Part No. |
SPD31N05 SPU31N05
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| OCR Text |
...anche energy, single pulse i d =31a, v dd =25v, r gs =25 w mj e as 140 avalanche energy, periodic limited by t jmax 7.5 e ar reverse diode d v /d t i s =31a, v ds =40v, d i /d t = 200 a/s, t jmax = 175 ?c d v /d t 6 kv/s gate source voltage... |
| Description |
N-Channel SIPMOS Power Transistor
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| File Size |
133.13K /
8 Page |
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it Online |
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Murata
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| Part No. |
BL02RN1
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| OCR Text |
...s line up 12 blm03a/15a/18a/21a/31a/41a 18 for ghz range noise suppression blm18h/18e 53 blm15b/18b/21b/31b 27 array type bla2aa/2ab/31a/31b 60 blm18r/21r 41 blm18p/21p/31p/41p 45 chip emifil r part numbering 66 capacitor type ... |
| Description |
On-Board Type (DC) EMI Suppression Filters
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| File Size |
2,995.54K /
163 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNA57264SE JANSR2N7474U2
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| OCR Text |
...S= 200V, VGS=0V VGS = 12V, ID = 31A VGS = 12V, ID = 31A VGS = 0V, ID = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects character... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
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| File Size |
177.98K /
8 Page |
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it Online |
Download Datasheet |
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