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  -13a Datasheet PDF File

For -13a Found Datasheets File :: 6420    Search Time::1.187ms    
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    FDS6679Z FDS6679ZNL

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6679Z FDS6679ZNL
OCR Text ..., ID = -11 A V GS =-4.5 V, ID =-13a, TJ =125C V GS = -4.5 V, V DS = -5 V V DS = -5 V, ID = -13 A -22 -1 -10 10 mV/C A A A On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coeffi...
Description 30V P-Channel PowerTrench MOSFET
30 Volt P-Channel PowerTrench MOSFET

File Size 60.32K  /  5 Page

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    IRF[International Rectifier]
Part No. IRGBC20U
OCR Text ....5A V GE = 15V -- 2.8 -- V IC = 13A See Fig. 2, 5 -- 2.5 -- IC = 6.5A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 1.4 4.3 -- S VCE = 100V, I C = 6.5A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V,...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A)

File Size 217.15K  /  6 Page

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    Infineon Technologies A...
Part No. IPD65R190C7
OCR Text ... rr - 830 - ns v r =400v, i f =13a,d i f /d t =55a/s; see table 8 reverse recovery charge q rr - 6.5 - c v r =400v, i f =13a,d i f /d t =55a/s; see table 8 peak reverse recovery current i rrm - 18 - a v r =400v, i f =13a,d i f /d t =5...
Description    Metal Oxide Semiconductor Field Effect Transistor

File Size 1,832.13K  /  15 Page

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    IRF[International Rectifier]
Part No. IRGBC20M
OCR Text ....0A V GE = 15V -- 2.7 -- V IC = 13A See Fig. 2, 5 -- 2.5 -- IC = 8.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.7 3.8 -- S VCE = 100V, I C = 8.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V,...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)

File Size 202.80K  /  6 Page

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    IRF[International Rectifier]
Part No. IRGBC20M-S
OCR Text ....0A V GE = 15V -- 2.7 -- V IC = 13A See Fig. 2, 5 -- 2.5 -- IC = 8.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.7 3.8 -- S VCE = 100V, I C = 8.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V,...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)

File Size 210.88K  /  6 Page

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    IRF[International Rectifier]
Part No. IRG4IBC20W_04 IRG4IBC20W IRG4IBC20WPBF IRG4IBC20W04
OCR Text ...2.6 IC = 6.5A VGE = 15V -- IC = 13A See Fig.2, 5 V -- IC = 6.5A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100 V, IC = 6.5A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = ...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 212.46K  /  8 Page

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    IRF[International Rectifier]
Part No. IRG4BC20UD-SPBF
OCR Text ... 1.0mA IC = 6.5A VGE = 15V IC = 13A See Fig. 2, 5 IC = 6.5A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 6.5A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 8.0A See Fig. 13 IC = 8.0A, TJ = 150C VGE = 20V...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 297.93K  /  11 Page

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    IRF[International Rectifier]
Part No. IRFI1310G
OCR Text ... ID = 1mA 0.04 VGS = 10V, ID = 13A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 25A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 25A 18 nC VDS = 80V 42 VGS = 10V, See Fig. 6 and...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)

File Size 319.89K  /  8 Page

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    DBCFG3QB250 DBCFG3QB800 DBCFG3QB1 DBCFG3QB10 DBCFG3QB13 DBCFG3QB3 DBCFG3QB5 DBCFG3QB500 DBCFG3QB7 DBCFG3TD800 DBCFG3TD25

Dubilier
Part No. DBCFG3QB250 DBCFG3QB800 DBCFG3QB1 DBCFG3QB10 DBCFG3QB13 DBCFG3QB3 DBCFG3QB5 DBCFG3QB500 DBCFG3QB7 DBCFG3TD800 DBCFG3TD250 DBCFG3TD500
OCR Text 13A) Approvals: IEC 127 Standards OUTLINE DRAWING DBC Dubilier Connectors 6.350.2 24.9 T*P Time delay Glass cartridge, nickel plated end caps Break capacity 35A/250V (to 1A) 100A/250V (to 3A) 200A/250V (to 13A) Approvals: IEC ...
Description FUSES 1 x 1/4 GLASS FUSES - QUICK BLOW

File Size 67.13K  /  1 Page

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    SSM4880AGM

Silicon Standard Corp.
Part No. SSM4880AGM
OCR Text ... BV DSS R DS(ON) G 30V 9m 13A D ID SO-8 S S S Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c...
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

File Size 226.42K  /  5 Page

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