...0 -10 70 3 150 -55 to +150 Unit v v v
21.00.5 15.00.2
Low collector to emitter saturation voltage vCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed...
Description
FILTER PLATE 10 A, 80 v, PNP, Si, POWER TRANSISTOR Silicon PNP epitaxial planar type(For power switching)
...5 -15 80 3 150 -55 to +150 Unit v v v
21.00.5 15.00.2
Low collector to emitter saturation voltage vCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed...
Description
Silicon PNP epitaxial planar type(For power switching)
... -20 100 3 150 -55 to +150 Unit v v v A A W C C
21.00.5 15.00.2
Low collector to emitter saturation voltage vCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be...
Description
Silicon PNP epitaxial planar type(For power switching)
... 15 1.3 150 -55 to +150
Unit v
1.00.2
0.750.1 0.40.1 2.30.2 4.60.4
0.90.1 0 to 0.15
Collector-emitter voltage 2SB1172 (Base open) 2SB1172A Emitter-base voltage (Collector open) Collector current Peak collector current Collect...
...15 1.3 150 -55 to +150 C C Unit v v v A A W
1
2
3
1: Base 2: Collector 3: Emitter I-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25C 3C
Parameter Collector-emitter voltage...
...15 1.3 150 -55 to +150 C C Unit v v v A A W
1
2
3
1: Base 2: Collector 3: Emitter I-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25C 3C
Parameter Collector-emitter voltage...
... -12 15 1.3 150 -55 to +150 C C v A A W v Unit v
0.750.1 0.40.1 2.30.2 4.60.4 1 2 3
0.90.1 0 to 0.15
Collector-emitter voltage 2SB1180 (Base open) 2SB1180A Emitter-base voltage (Collector open) Collector current Peak collector curr...
...g 150 -55~+150 W
*2 *3
Unit v v v A(DC) A(Pulse)
*1
2SB1260 Collector power dissipation 2SB1241, 2SB1181 2SB1181 Junction temperature Storage temperature
W(Tc=25C) C C
*1 Single pulse, Pw=100ms *2 When mounted on a 40x40x0.7 m...
...150 C C W
1 2
0.5
(3)
v v v A
0.4
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
2SB1238
6.8 2.5
1 When mounted on a 40x40x0.7 mm ceramic board. 2 Printed circuit board 1.7 mm thick, collector plating ...
Description
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Medium power transistor
... 0.5 300 150 -55 ~ +150
Unit v v
1
2
3
1.27 1.27
v A A mW C C
1:Emitter 2:Collector 3:Base
2.540.15
EIAJ:SC-72 New S Type Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base...