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  t-2.5mm Datasheet PDF File

For t-2.5mm Found Datasheets File :: 23142    Search Time::4.531ms    
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    RGP10D RGP10JA RGP10K RGP10KA RGP10MA RGP10M RGP10A RGP10B RGP10G RGP10J

ZOWIE[Zowie Technology Corporation]
Part No. RGP10D RGP10JA RGP10K RGP10KA RGP10MA RGP10M RGP10A RGP10B RGP10G RGP10J
OCR Text ... 0.10 1.0 10 100 t , PULSE DURATION, sec REV. : 0 Zowie Technology Corporation
Description SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER

File Size 58.06K  /  2 Page

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    SG5311 SG5311B SG5311_B

AUK[AUK corp]
Part No. SG5311 SG5311B SG5311_B
OCR Text T-13/4) all plastic mold type * Low power consumption Outline Dimensions unit : mm STRAIGHT TYPE 5.00.2 STOPPER TYPE 5.00.2 8.60.2 0.80.2 0.80.2 8.60.2 0.5 23.0 MIN 1.0MIN 0.5 1.0MIN 2.54NOM 0.5 2.54NOM...
Description LED Lamp

File Size 165.02K  /  3 Page

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    SGW13N60UFD SGW13N60UFDTM

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW13N60UFD SGW13N60UFDTM
OCR Text ...cal Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units...2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitan...
Description Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT

File Size 594.42K  /  8 Page

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    SGW13N60UF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW13N60UF
OCR Text ...cal Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units...2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitan...
Description Ultra-Fast IGBT

File Size 535.65K  /  7 Page

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    SGW15N60 SGW15N60RUF

FAIRCHILD[Fairchild Semiconductor]
Part No. SGW15N60 SGW15N60RUF
OCR Text ...cal Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units...2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitan...
Description    Short Circuit Rated IGBT

File Size 554.64K  /  7 Page

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    SKW15N60 SKB15N60 SKP15N60

INFINEON[Infineon Technologies AG]
Part No. SKW15N60 SKB15N60 SKP15N60
OCR Text ...(sat) V G E = 15 V , I C = 15 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 1 5 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0 A , V C E = V G E V...
Description IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-Technology with An...

File Size 445.74K  /  14 Page

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    SMBT3904S Q62702-A1201

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. SMBT3904S Q62702-A1201
OCR Text ...urrent Total power dissipation, T S = 115 C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - solde...2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 SMBT 3904S Electrica...
Description NPN Silicon Switching Transistor Array

File Size 78.32K  /  8 Page

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    SMBTA06M Q62702-A3473

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. SMBTA06M Q62702-A3473
OCR Text ...urrent Total power dissipation, T S 95 C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150 - 65...+150 W C ...2 Cu Semiconductor Group Semiconductor Group 11 Jun-08-1998 1998-11-01 SMBTA 06M Electrical...
Description INVERTER 12V-INPUT 1200V-OUTPUT NPN硅晶体管自动对焦
NPN Silicon AF Transistor
From old datasheet system

File Size 30.15K  /  4 Page

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    SMBTA56M Q62702-A3474

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. SMBTA56M Q62702-A3474
OCR Text ...urrent Total power dissipation, T S 95 C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150 - 65...+150 W C ...2 Cu Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 SMBTA 56M Electrical...
Description INVERTER 24V-INPUT 1200V-OUTPUT 自动对焦进步党硅晶体
PNP Silicon AF Transistor
From old datasheet system

File Size 29.94K  /  4 Page

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    SMBTA92M Q62702-A1244

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. SMBTA92M Q62702-A1244
OCR Text ...urrent Total power dissipation, T S 83 C Junction temperature Storage temperature Symbol Value 300 300 5 500 100 1.5 150 - 65...+150 W C mA...2 Cu Semiconductor Group Semiconductor Group 11 Mar-13-1998 1998-11-01 SMBTA 92M Elec...
Description From old datasheet system
PNP Silicon High-Voltage Transistor

File Size 26.21K  /  4 Page

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For t-2.5mm Found Datasheets File :: 23142    Search Time::4.531ms    
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