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  scr vdrm 200v to 299 9v Datasheet PDF File

For scr vdrm 200v to 299 9v Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    FQB34N20 FQI34N20 FQB34N20TMAM002

FAIRCHILD[Fairchild Semiconductor]
http://
Part No. FQB34N20 FQI34N20 FQB34N20TMAM002
Description 200v N-Channel QFET
200v N-Channel MOSFET

File Size 724.20K  /  9 Page

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    FQB5P20 FQI5P20 FQB5P20TM

FAIRCHILD[Fairchild Semiconductor]
http://
Part No. FQB5P20 FQI5P20 FQB5P20TM
Description 200v P-Channel QFET
200v P-Channel MOSFET

File Size 630.38K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI7P20 FQB7P20 FQB7P20TM
Description 200v P-Channel QFET
200v P-Channel MOSFET

File Size 668.06K  /  9 Page

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    AZ983-1C-12D AZ983-1C-6D AZ983-1C-24D AZ983 AZ983-1A-12D AZ983-1A-24D AZ983-1A-6D

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
ZETTLER electronics
Part No. AZ983-1C-12D AZ983-1C-6D AZ983-1C-24D AZ983 AZ983-1A-12D AZ983-1A-24D AZ983-1A-6D
Description CAPACItoR;GLASS;33PF;5%;300V
CAPACItoR, FIXED, GLASS 1000PF /- 5%, 300V
T&R / HICV JAPAN - FN RoHS Compliant: No
CAP 10PF 200v 200v X7R RAD.20 .20X.20 BULK M-MIL-PRF-39014
80 AMP AUtoMOTIVE RELAY

File Size 72.65K  /  2 Page

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    UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
Part No. UF630L-TF3-T UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Description 9A, 200v, 0.4?/a> , N-CHANNEL POWER MOSFETS
9A, 200v, 0.4 , N-CHANNEL POWER MOSFETS
9A, 200v, 0.4з , N-CHANNEL POWER MOSFETS 9A条,00V.4з的N通道功率MOSFET

File Size 163.81K  /  8 Page

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    CBRHDSH1-200 CBRLD1SERIES

Central Semiconductor Corp
Part No. CBRHDSH1-200 CBRLD1SERIES
Description SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER
1.0A, 40V thru 200v Schottky Bridge Rectifier in the HD DIP package
1.0A, 200v thru 1000V Bridge Rectifi ers

File Size 1,278.09K  /  2 Page

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    BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 BY329F-1200 BY329X-800 BY329F-1000 BY329F-800 BY329X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 BY329F-1200 BY329X-800 BY329F-1000 BY329F-800 BY329X
Description Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Rectifier diodes fast/ soft-recovery
Rectifier diodes fast, soft-recovery

File Size 56.28K  /  7 Page

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    IRF630S 6059

意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. IRF630S 6059
Description From old datasheet system
N - CHANNEL 200v - 0.35 -9A-D 2 PAK MESH OVERLAY TM MOSFET
N - CHANNEL 200v - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET
N - CHANNEL 200v - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET

File Size 84.11K  /  8 Page

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    LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM LS3180-K LG3180-EH LG3180-G LG3180-GK LG3180-H LY3180-J LY3180-FJ LY318

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM LS3180-K LG3180-EH LG3180-G LG3180-GK LG3180-H LY3180-J LY3180-FJ LY3180-G LY3180-H LY3180-HL
Description Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:25mA; Current, It av:8A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes T1毫米)广角发光二极管
T1 (3mm) WIDE ANGLE LED LAMP T1毫米)广角发光二极管

File Size 91.48K  /  1 Page

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    APT20M38SVR APT20M38SVRG

Microsemi Corporation
ADPOW[Advanced Power Technology]
Part No. APT20M38SVR APT20M38SVRG
Description 200v 67A 0.038W
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200v 67A 0.038 Ohm

File Size 76.53K  /  4 Page

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