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  rdson Datasheet PDF File

For rdson Found Datasheets File :: 3689    Search Time::1.047ms    
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    LTC3531 LTC3531-3 LTC3531-3.3 LTC3531EDD LTC3531EDD-3 LTC3531EDD-3.3 LTC3531ES6-3 LTC3531ES6-3.3

Linear Technology
Part No. LTC3531 LTC3531-3 LTC3531-3.3 LTC3531EDD LTC3531EDD-3 LTC3531EDD-3.3 LTC3531ES6-3 LTC3531ES6-3.3
OCR Text ...e PMOS Switch Leakage NMOS B, C rdson PMOS A rdson CONDITIONS ELECTRICAL CHARACTERISTICS No Load No Load No Load VFB = 1.225V VIN VOUT VIN VIN = 5V, VOUT = 3.6V, FB = 1.3V VOUT = 3.6V SHDN = 0V, VOUT = 0V Switches B and C Switches A...
Description 200mA Buck-Boost Synchronous DC/DC Converters

File Size 690.44K  /  16 Page

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    L6728TR

STMicroelectronics
Part No. L6728TR
OCR Text ...rogrammable OCP across Low-Side rdson OV / UV protections VSEN disconnection protection Oscillator internally fixed at 300kHz LS-LESS to manage pre-bias start-up Adjustable output voltage Disable function Internal Soft-Start VFQFPN 10 packa...
Description Single phase PWM controller with PowerGOOD

File Size 953.02K  /  32 Page

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    PSMN4R0-30YL

NXP Semiconductors
Part No. PSMN4R0-30YL
OCR Text ....3 nC Static characteristics rdson drain-source on-state resistance 2.69 4 m NXP Semiconductors PSMN4R0-30YL N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Symb...
Description N-channel TrenchMOS logic level FET

File Size 176.33K  /  13 Page

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    Atmel, Corp.
Part No. STA501
OCR Text ...power pchannel/nchannel mosfet rdson id=1a 200 270 m w i dss power pchannel/nchannel leakage idss vcc=35v 50 m a g n power pchannel rdson matching id=1a 95 % g p power nchannel rdson matching id=1a 95 % dt_s low current dead time (sta...
Description 40V 3.5A DOUBLE POWER HALF BRIDGE 40V3.5A的双电源半桥

File Size 132.53K  /  8 Page

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    Melexis
Part No. US73
OCR Text ...may/04 7. performance graphs rdson (nmos + pmos) vs. vdd, temperature 0 2 4 6 8 10 -40 0 40 80 120 junction tem perature (c) rdson (ohms) 4 v 5 v 12 v 30 v us72 / 73 rdson (nmos + pmos) vs. vdd, temperature 0 2 4 6 8 10 4 8 12 16 20 ...
Description (US72 / US73) Single Coil Fan Driver

File Size 144.94K  /  9 Page

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    PHB100N03LT NXPSEMICONDUCTORS-PHB100N03LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHB100N03LT NXPSEMICONDUCTORS-PHB100N03LT
OCR Text ...e data Table 2: VDS ID Ptot Tj rdson Quick reference data Conditions Tj = 25 to 175 C Tmb = 25 C; VGS = 5 V Tmb = 25 C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A Typ - - - - 5.0 6.2 Max 25 75 125 175 5.8 7.5 Unit V A W C m m drain-source v...
Description N-channel enhancement mode field-effect transistor 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 133.79K  /  13 Page

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    STA50506 STA50513TR

STMicroelectronics
Part No. STA50506 STA50513TR
OCR Text ...PUT PULSE WIDTH DISTORTION 200m rdson COMPLEMENTARY DMOS OUTPUT STAGE CMOS COMPATIBLE LOGIC INPUTS THERMAL PROTECTION THERMAL WARNING OUTPUT UNDER VOLTAGE PROTECTION Figure 1. Package PowerSO36 Table 1. Order Codes Part Number...
Description 40V 3.5A QUAD POWER HALF BRIDGE

File Size 158.58K  /  10 Page

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    TEA1210 TEA1210TS

PHILIPS[Philips Semiconductors]
Part No. TEA1210 TEA1210TS
OCR Text ...it, featuring internal very low rdson power MOSFETs * Up-or-down conversion * Start-up from 1.85 V input voltage * Adjustable output voltage * High efficiency over large load range * 600 kHz switching frequency * Low quiescent power consump...
Description High efficiency high current DC/DC converter
High efficiency, high current DC/DC converter

File Size 83.84K  /  20 Page

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    BSP250

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BSP250
OCR Text ...TA SYMBOL VDS VSD VGSO VGSth ID rdson Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipa...
Description P-channel enhancement mode vertical D-MOS transistor

File Size 114.16K  /  12 Page

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    BSS192

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BSS192
OCR Text ...ERENCE DATA SYMBOL VDS VGSth ID rdson PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance ID = -100 mA; VGS = -10 V ID = -1 mA; VGS = VDS CONDITIONS MAX. -240 -2.8 -150 20 V ...
Description P-channel enhancement mode vertical D-MOS transistor

File Size 60.08K  /  12 Page

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For rdson Found Datasheets File :: 3689    Search Time::1.047ms    
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