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For eoff Found Datasheets File :: 4828 Search Time::1.64ms
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				IRF[International Rectifier]
Part No.	50MT060ULS 50MT060ULST
OCR Text	...ed) Parameters Qg Qge Qgc Eon eoff Ets Eon eoff Ets Cies Coes Cres Ct trr Irr Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tu...
Description	600V UltraFast 4-20 kHz Ls Chop S IGBT in a MTP package LOW SIDE CHOPPER IGBT MTP
File Size	197.34K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	50MT060WH 50MT060WHT
OCR Text	...ed) Parameters Qg Qge Qgc Eon eoff Ets Eon eoff Ets Cies Coes Cres trr Irr Qrr trr Irr Qrr Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Swit...
Description	600V Warp 20-100 kHz Half-Bridge IGBT in a MTP package HALF-BRIDGE IGBT MTP
File Size	59.29K / 7 Page	View it Online	Download Datasheet

				Fuji Electric ETC[ETC]
Part No.	7MBP50TEA060
OCR Text	... cc=15V,Tj=1 25C 6 Eon 5 4 3 2 eoff 1 E rr 0 0 10 20 30 40 50 60 eoff E rr Collec tor cu rren t : Ic (A) Collec tor cu rren t : Ic (A) Reversed b iased safe operating area Vcc=15V,Tj 12 5C Th erm al res is ta nc e : R th (j-c)...
Description	Econo IPM series IGBT-IPM
File Size	342.73K / 9 Page	View it Online	Download Datasheet

				Aeroflex Circuit Techno... AEROFLEX[Aeroflex Circuit Technology]
Part No.	ACT5101-1
OCR Text	...nds maximum jcIGBT jcDIODE Eon eoff SYMBOL TEST CONDITIONS MIN TYP MAX UNIT td (on) td (off) tSDU tr tf 700 2 3.5 100 250 nsec sec sec nsec nsec td (on) td (off) tSDL tr tf Tc = +125C 600 2 3.5 250 200 n...
Description	ACT5101-1 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE
File Size	132.36K / 12 Page	View it Online	Download Datasheet

				DYNEX SEMICONDUCTOR LTD DYNEX[Dynex Semiconductor]
Part No.	DGT408BRP DGT408BRP4540
OCR Text	...IDM IRRM VGT IGT IRGM EON td tr eoff tgs tgf tgq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off ...
Description	Reverse Blocking Gate Turn-off Thyristor Target Information
File Size	79.49K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA200TD120U
OCR Text	...ge Qgc td(on) tr td(off) tf Eon eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time...
Description	HALF-BRIDGE IGBT DOUBLE INT-A-PAK
File Size	295.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA400TD60U
OCR Text	...ge Qgc td(on) tr td(off) tf Eon eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time...
Description	600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT
File Size	235.92K / 10 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BSM100GB120DN2K 100B12K2 C67070-A2107-A70
OCR Text	... mWs E 30 25 35 30 25 15 20 eoff 15 10 5 5 0 0 50 100 150 A 250 0 0 10 20 30 40 10 eoff 20 IC 60 RG Semiconductor Group 7 Mar-29-1996 BSM 100 GB 120 DN2K Forward characteristics of fast recovery reverse diode...
Description	From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
File Size	113.27K / 9 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BSM100GB120DN2 100B12N2 C67076-A2107-A70
OCR Text	... mWs E 30 25 35 30 25 15 20 eoff 15 10 5 5 0 0 50 100 150 A 250 0 0 10 20 30 40 10 eoff 20 IC 60 RG Semiconductor Group 7 Mar-29-1996 BSM 100 GB 120 DN2 Forward characteristics of fast recovery reverse diode ...
Description	From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
File Size	131.39K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BSM100GB170DN2 100B17N2 C67070-A2703-A67
OCR Text	...200 mWs E 160 140 120 100 80 60 eoff 40 20 0 0 Eon E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, IC = 100 A 200 mWs E 160 140 120 Eon 100 80 60 40 eoff 20 0 0 50 100 150 A 250 20 40 60...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) From old datasheet system
File Size	130.11K / 9 Page	View it Online	Download Datasheet

For eoff Found Datasheets File :: 4828 Search Time::1.64ms
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