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  enhancement--mode Datasheet PDF File

For enhancement--mode Found Datasheets File :: 25211    Search Time::8.828ms    
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    PSMN085-150K PSMN085_150K-01

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PSMN085-150K PSMN085_150K-01
OCR Text enhancement mode field-effect transistor Rev. 01 -- 16 January 2001 Product specification 1. Description SiliconMAXTM1 products use the latest Philips TrenchMOSTM2 technology to achieve the lowest possible on-state resistance in a SOT9...
Description N-channel enhancement mode field-effect transistor
From old datasheet system

File Size 96.84K  /  13 Page

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    PSMN165-200K PSMN165_200K-01

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PSMN165-200K PSMN165_200K-01
OCR Text enhancement mode field-effect transistor Rev. 01 -- 16 January 2001 Product specification 1. Description SiliconMAXTM1 products use the latest Philips TrenchMOSTM2 technology to achieve the lowest possible on-state resistance in a SOT9...
Description N-channel enhancement mode field-effect transistor
From old datasheet system

File Size 104.20K  /  13 Page

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    QX-1

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. QX-1
OCR Text ... Overview: The QX-1 is an audio enhancement and control IC featuring QSound Labs' QXpander process. The patented QXpander technology produce...MODE=BYPASS, RL=10k, TA=25C unless otherwise noted) Limits Parameter Symbol Condition min. typ. max....
Description QX PANDER PROCESSOR WITH VOLUME AND TONE CONTROL 二心迎合处理器音量和音调控制

File Size 427.99K  /  10 Page

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    ENH057Q1-450 ENH057Q1-350 ENH057Q1-600

White Electronic Designs Corporation
Part No. ENH057Q1-450 ENH057Q1-350 ENH057Q1-600
OCR Text ...ve matrix LCD module. The first enhancement is an index matching (IM) film lamination to the front surface of the display polarizer. The IM ...mode and vertical display mode. Backlight-driving DC/AC inverter is not built in this module. WEDC a...
Description ENH057Q1-350/450/600 Color TFT-LCD Module Features

File Size 148.46K  /  16 Page

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    SPN3414 SPN3414S23RG

SYNC POWER Crop.
Part No. SPN3414 SPN3414S23RG
OCR Text Enhancement Mode MOSFET DESCRIPTION The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minim...
Description N-Channel Enhancement Mode MOSFET

File Size 193.40K  /  8 Page

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    SYNC-POWER[SYNC POWER Crop.]
Part No. SPC6332S36RG SPC6332
OCR Text Enhancement Mode MOSFET DESCRIPTION The SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to mini...
Description N & P Pair Enhancement Mode MOSFET

File Size 261.05K  /  11 Page

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    TI store
Part No. LM5113-Q1 LM5113QDPRRQ1
OCR Text ...-a, half-bridge gate driver for enhancement mode gan fets 1 1 features 1 ? qualified for automotive applications ? aec-q100 qualified with the following results: ? device temperature grade 1: -40 c to 125 c ambient operating temperature r...
Description <font color=red>[Old version datasheet]</font> 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs

File Size 2,281.79K  /  26 Page

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    SYNC-POWER[SYNC POWER Crop.]
Part No. SPC6601ST6RG SPC6601
OCR Text Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to mini...
Description N & P Pair Enhancement Mode MOSFET

File Size 260.83K  /  11 Page

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    ST2317S23RG

Stanson Technology
Part No. ST2317S23RG
OCR Text enhancement mode mosfet - 5 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com ...
Description P Channel Enhancement Mode MOSFET

File Size 872.91K  /  6 Page

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    SYNC-POWER[SYNC POWER Crop.]
Part No. SPC6602ST6RG SPC6602
OCR Text Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to mini...
Description N & P Pair Enhancement Mode MOSFET

File Size 262.42K  /  11 Page

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For enhancement--mode Found Datasheets File :: 25211    Search Time::8.828ms    
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Price and Availability




 
Price & Availability of enhancement--mode
TTI

Part # Manufacturer Description Price BuyNow  Qty.
2N7002E-T1-E3
2N7002E-T1-E3
Vishay Intertechnologies MOSFETs 60V 0.24A 3000: USD0.098
6000: USD0.092
9000: USD0.087
15000: USD0.085
24000: USD0.083
45000: USD0.081
BuyNow
96000
2N7002E-T1-GE3
2N7002E-T1-GE3
Vishay Intertechnologies MOSFETs 60V 240mA 0.35W 3.0ohm @ 10V 3000: USD0.089
9000: USD0.082
24000: USD0.078
45000: USD0.074
BuyNow
78000

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