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MOTOROLA INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MTW10N100E
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| OCR Text |
E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET...AMPS) 16 14 12 10 5V 8 6 4 2 0 0 2 4 6 4V 8 10 12 14 16 18 20 22 24 26 28 30 VDS, DRAIN-TO-SOURCE VO... |
| Description |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
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| File Size |
192.35K /
8 Page |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
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| Part No. |
MTP9N25E MTP9N25 MTP9N25E-D
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| OCR Text |
E-FET.TM Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high ener...AMPS) 15 12 9 6V 6 3 0 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5V VGS = 10 V 9V 18 8V I... |
| Description |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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| File Size |
206.06K /
8 Page |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MTP5P06V
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| OCR Text |
... devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed ...AMPS) 8 TJ = 25C 6V 9V 8V 10 7V I D , DRAIN CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 9 0 2 3 4 5 6 7 8 VDS ... |
| Description |
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
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| File Size |
191.99K /
8 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
MTP23P06V MTP23P06V-D
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| OCR Text |
...RJC). A Power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the s...AMPS) 800 E , SINGLE PULSE DRAIN-TO-SOURCE AS AVALANCHE ENERGY (mJ) 700 600 500 400 300 200 100 0 25... |
| Description |
Power MOSFET 23 Amps, 60 Volts P-Channel TO-220
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| File Size |
78.27K /
8 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MJ1102105 MJ11021G MJ11022G MJ11022 MJ11021
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| OCR Text |
... D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
TUT V2 APPROX +12 V 0 V1 APPROX -8.0 V tr,...AMPS) 5.0 ms 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0 3.0 dc TJ = 175C SECOND BREAKDOWN LIMIT BONDING ... |
| Description |
Complementary Darlington Silicon Power Transistors
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| File Size |
75.30K /
5 Page |
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it Online |
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Price and Availability
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