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STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
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| Description |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
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| File Size |
125.39K /
17 Page |
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it Online |
Download Datasheet
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Intersil Corporation
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| Part No. |
X40020V14I-C X40020V14I-B X40020V14I-A
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| Description |
DIODE, STANDARD, 95A, 400V, STUD; Voltage, Vrrm:400V; Current, If av:95A; case style:E12; Current, Ifs max:700A; Diode type:Standard recovery; Polarity, diode:Stud Anode; Thread size:M8; Voltage, forward at If:1.5V RoHS Compliant: Yes
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):50A; Non Repetitive Forward Surge Current Max, Ifsm:700A; Forward Voltage Max, VF:1.6V; Package/case:SO-32B
DIODE, STUD 50A 1200VDIODE, STUD 50A 1200V; Voltage, Vrrm:1200V; Current, If av:50A; Current, Ifs max:700A; Voltage, forward at If:1.6V; case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Anode
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| File Size |
339.46K /
24 Page |
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it Online |
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Microsemi, Corp.
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| Part No. |
2731-20
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| Description |
S-Band 2700-3100 MHz; P(out) (W): 20; P(in) (W): 3; Gain (dB): 8.2; Vcc (V): 36; Pulse Width (µsec): 100; Duty Cycle (%): 10; case style: 55CR S BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
59.19K /
3 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
MS1007
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| Description |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; case style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
157.18K /
4 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
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| Part No. |
SD1536-03
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| Description |
Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 90; P(in) (W): 13; Gain (dB): 8.4; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; case style: M115 L BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
58.53K /
1 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
Microsemi, Corp.
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| Part No. |
MS1329
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| Description |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; case style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
190.23K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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