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  amps-if Datasheet PDF File

For amps-if Found Datasheets File :: 13950    Search Time::1.687ms    
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    IRF730

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. IRF730
OCR Text ...er D = tp/T ID, Drain current (Amps) Tj = 25 C PHP5N40 10 V 7V 15 6.5 V 6V 10 5.5 V 5V 5 VGS = 4.5 V 120 110 100 90 80 70 60 50 40 30 20...IF, Source-Drain diode current (Amps) VGS = 0 V PHP5N40 VDD = 320 V 15 10 10 150 C Tj =...
Description PowerMOS transistor Avalanche energy rated

File Size 55.04K  /  7 Page

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    IRF737LC

IRF[International Rectifier]
Part No. IRF737LC
OCR Text ...VDD RG ID, Drain Current (Amps) 5.0 10V 4.0 Pulse Width 1 s Duty Factor 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 2.0 1.0 0.0 25 50 75 100 125 A 150 TC , Case Temperature (C) Fig 9. Maximum Drain...
Description 300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET?? Power MOSFET

File Size 144.10K  /  8 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ... Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer VBB Generator Refresh Time...if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditi...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ... Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer VBB Generator * Access mod...if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditi...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ... Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer FUNCTIONAL BLOCK DIAGRAM V...if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditi...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ... Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer FUNCTIONAL BLOCK DIAGRAM *...if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditi...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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AMP-320
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