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  80v 7a Datasheet PDF File

For 80v 7a Found Datasheets File :: 410    Search Time::1.266ms    
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    2SD1706

Inchange Semiconductor Company Limited
Part No. 2SD1706
OCR Text ...kdown voltage- : v (br)ceo = 80v(min) good linearity of h fe low collector saturation voltage- : v ce( sat ) = 0.5v(max.)@ i c = 7a complement to type 2sb1155 applications designed for power switching applications ...
Description isc Silicon NPN Power Transistor

File Size 84.91K  /  2 Page

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    2N6290

Savantic, Inc.
Part No. 2N6290
OCR Text ... cut-off current 2n6292 v ce =80v; v be =-1.5v v ce =70v; be =-1.5v,t c =125 0.1 2.0 ma i ebo emitter cut-off current v eb =...7a ; v ce =4v 2.3 f t transition frequency i c =0.5a ; v ce =4v;f=1mhz 2.5 mhz savantic se...
Description Silicon NPN Power Transistors

File Size 91.69K  /  3 Page

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    2SD1706

Inchange Semiconductor Company Limited
Part No. 2SD1706
OCR Text ...er Breakdown Voltage: V(BR)CEO= 80v(Min) *Good Linearity of hFE *Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max.)@ IC= 7a *Complement to Type 2SB1155 APPLICATIONS *Designed for power switching applications ABSOLUTE MAXIMUM RATIN...
Description Silicon NPN Power Transistor

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    2SK3530-01MR 2SK3530

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2SK3530-01MR 2SK3530
OCR Text ... Units /W /W *1 L=8.80mH,Vcc=80v *2 I F-D,-di/dt=50A/ s,Vcc DSS,Tch150 DATE DRAWN CHECKED MA4LE NAME APPROVED DWG.NO. Fuji Electric Co.,Ltd. REVISIONS
Description    Fuji Power MOSFET SuperFAP-G series Target Specification
Fuji Power MOSFET SuperFAP-G series Target Specification 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 28.34K  /  1 Page

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    2N6315 2N6316

Inchange Semiconductor Company Limited
Part No. 2N6315 2N6316
OCR Text ...r cut-off current 2n6316 v cb =80v; i e =0 0.25 ma i cex collector cut-off current v ce =rated v ce ; v be(off) =1.5v t c =150 ...7a ; v ce =4v 4 f t transition frequency i c =0.25a;v ce =10v;f=1.0mhz 4 mhz incha...
Description Silicon NPN Power Transistors

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    2N6315 2N6316

Savantic, Inc.
Part No. 2N6315 2N6316
OCR Text ...r cut-off current 2n6316 v cb =80v; i e =0 0.25 ma i cex collector cut-off current v ce =rated v ce ; v be(off) =1.5v t c =150 ...7a ; v ce =4v 4 f t transition frequency i c =0.25a;v ce =10v;f=1.0mhz 4 mhz savantic se...
Description Silicon NPN Power Transistors

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    STP7NE10 6788

ST Microelectronics
STMicroelectronics
Part No. STP7NE10 6788
OCR Text ...ns V DD = 50 V R G = 4.7 V DD =80v R G = 4.7 I D = 3.5A V GS = 10 V I D =7a V GS = 10 V Min. Typ. 25 7 7 8 16 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Sour...
Description From old datasheet system
N - CHANNEL 100V - 0.3 - 7a - TO-220 STripFET TM POWER MOSFET
N - CHANNEL 100V - 0.3 ohm - 7a - TO-220 STripFET POWER MOSFET
N - CHANNEL 100V - 0.3 ohm - 7a - TO-220 STripFET POWER MOSFET

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    2N6292

Inchange Semiconductor Company Limited
Part No. 2N6292
OCR Text ... VCE=50V; BE=-1.5V,TC=125ae VCE=80v; VBE=-1.5V VCE=70V; BE=-1.5V,TC=125ae VEB=5V; IC=0 ICEX Collector cut-off current mA IEBO ...7a ; VCE=4V IC=0.5A ; VCE=4V;f=1MHz 2.3 2.5 MHz 30 150 hFE-1 DC current gain 2N6290 2N6292 ...
Description Silicon NPN Power Transistors

File Size 118.95K  /  3 Page

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    2N6106 2N6108 2N6110

Savantic, Inc.
Part No. 2N6106 2N6108 2N6110
OCR Text ...V VCE=-50V; BE=1.5V,TC=125 VCE=-80v; VBE=1.5V VCE=-70V; BE=1.5V,TC=125 VEB=-5V; IC=0 IC=-2A ; VCE=-4V IC=-2.5A ; VCE=-4V IC=-3A ; VCE=-4V IC=-7a ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-4V;f=1MHz 10 2.3 30 -0.1 -2.0 -0.1 -2.0 -0....
Description Silicon PNP Power Transistors

File Size 89.94K  /  3 Page

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For 80v 7a Found Datasheets File :: 410    Search Time::1.266ms    
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