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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
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OCR Text |
... E-die (x4, x8)
Block Diagram (64mbit x 4 / 32Mbit x 8 I/O x 4 Banks)
DDR SDRAM
x4/8
LWE
I/O Control
CK, CK
Data Input Register Serial to parallel
LDM (x4x8)
Bank Select
x8/16
8Mx8/ 4Mx16 Output Buffer 2-bit pre... |
Description |
DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装(x4/x8 DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
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File Size |
195.42K /
18 Page |
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it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
K5T6432YT K5T6432YTM-T310
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OCR Text |
...p Package Memory which combines 64mbit Four Bank Flash and 32Mbit UtRAM. The 64mbit Flash memory is organized as 4M x16 bit and 32Mbit UtRAM is organized as 2M x16 bit. The 64mbit Flash memory is the high performance non-volatile memory fab... |
Description |
64mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
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File Size |
602.15K /
40 Page |
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it Online |
Download Datasheet
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Price and Availability
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