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Macronix International Co., Ltd.
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| Part No. |
23C8000-10
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| OCR Text |
...output enable/chip select toe - 50ns - 50ns - 50ns - 50ns access time output low z delay tlz 0ns - 0ns - 0ns - 0ns - note 3 output high z delay thz - 20ns - 20ns - 20ns - 20ns note 4
4 p/n:pm0137 rev. 4.3, jul. 03, 2003 mx23c8000 ac test... |
| Description |
8M-BIT [1M x 8] CMOS MASK ROM
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| File Size |
636.85K /
11 Page |
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Macronix International Co., Ltd.
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| Part No. |
23C1611-10 23C1611-12
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| OCR Text |
...4 pin sop mx23c1611mc-12 120ns 50ns 44 pin sop mx23c1611pc-10 100ns 30ns 42 pin pdip mx23c1611pc-12 120ns 50ns 42 pin pdip mx23c1611tc-1...high z high z - stand-by l h x x high z high z - active l l h output d0~d7 d8~d15 word active l l l ... |
| Description |
5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
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| File Size |
475.67K /
9 Page |
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it Online |
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HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
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| Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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| OCR Text |
...GL-6 HY51V(S)18163HG/HGL-7 tRAC 50ns 60ns 70ns
* * * * *
JEDEC standard pinout 42pin plastic SOJ / 44(50)pin TSOP-II (400mil) Single p...High Voltage Input Low Voltage Symbol Vcc VIH VIL Min 3.0 2.0 -0.3 Typ. 3.3 Max 3.6 Vcc + 0.3 0.8 Un... |
| Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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| File Size |
105.82K /
12 Page |
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it Online |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
K9S5608V0A-SSB0 K9S5608V0A
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| OCR Text |
...0s(Max.) - Serial Page Access : 50ns(Min.) *Fast Write Cycle Time - Program Time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) *Command/Addres...High Voltage Generator
Global Buffers
Output Driver
CLE ALE WP
Figure 2. ARRAY ORGANIZAT... |
| Description |
32M x 8Bit SmartMedia Card Data Sheet
32M x 8 Bit SmartMediaTM Card
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| File Size |
344.88K /
26 Page |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
KBE00F005A-D411 KBE00F005A
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| OCR Text |
...5s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Addr...high data rate Dynamic RAM.(organized with two pieces of 256Mbit Mobile SDRAM) 1Gbit NAND Flash memo... |
| Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,346.36K /
87 Page |
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it Online |
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Price and Availability
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