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For 3.0pf Found Datasheets File :: 5458 Search Time::3.703ms
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				HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc. Analog Devices, Inc. Panasonic Industrial Solutions
Part No.	HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI HY62VT08081E-DPC HY62VT08081E-DPE HY62VT08081E-DPI HY62VT08081E-DTC HY62VT08081E-DTE HY62VT08081E-DTI HY62UT0808 HY62KT08081E-DTI HY62KT08081E HY62KT08081E-DGC HY62KT08081E-DGE HY62KT08081E-DGI HY62KT08081E-DPC HY62KT08081E-DPE HY62KT08081E-DPI HY62KT08081E-DTC HY62KT08081E-DTE HY62UT08081E-DGC HY62UT08081E-DGE HY62UT08081E-DGI HY62UT08081E-DPC HY62UT08081E-DPE HY62UT08081E-DPI HY62UT08081E-DTC HY62UT08081E-DTE HY62UT08081E-DTI HY62KT08081E-DT70E HY62KT08081E-DT10E HY62KT08081E-DT10C HY62KT08081E-DT70C HY62KT08081E-DT10I HY62KT08081E-DP10I HY62KT08081E-DP10E HY62KT08081E-DG70C HY62KT08081E-DG70E HY62KT08081E-DG10E HY62KT08081E-DG10C HY62KT08081E-DP10C HY62KT08081E-DG10I HY62VT08081E-DG10E HY62VT08081E-DP10E HY62KT08081E-DG70I HY62UT08081E-DT10I HY62UT08081E-DT10C HY62VT08081E-DT10E HY62VT08081E-DT10I HY62VT08081E-DT10C HY62VT08081E-DT85C HY62KT08081E-DT85C HY62UT08081E-DT85C HY62UT08081E-DG10I HY62UT08081E-DP10I HY62UT08081E-DP10C HY62UT08081E-DG10C HY62UT08081E-DT70I HY62UT08081E-DP70C HY62UT08081E-DT85I HY62UT08081E-DT70C HY62VT08081E-DT70I HY62VT08081E-DP85C HY62KT08081E-DG85I HY62UT08081E
OCR Text	...2UT08081E-I Note *. Measured at 30pF test load. Operation Current(mA) 2 2 2 PIN CONNECTION A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 1 2 3 4 5 6 7 8 9 10 11...
Description	Low Power Slow SRAM - 256Kb SWITCH, REED SPST-NO 10W SMD QSW-REED,10MM,10W,SMD 9 POS FR-4 SIP SOCKET x8\|3V\|70/85/100\|Low Power Slow SRAM - 256K x8\|3.3V\|70/85/100\|Low Power Slow SRAM - 256K 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM x8 SRAM x8的SRAM x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
File Size	190.56K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IKW40N65H5 PG-TO247-3
OCR Text	...=15.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e g c e c 6 ikw40n65h5,ikp40n65h5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 tu...
Description	650V DuoPack IGBT and Diode High speed switching series fifth generation
File Size	2,679.32K / 18 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IKW40N65F5 IKP40N65F5 PG-TO247-3
OCR Text	...=15.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e g c e c 6 ikw40n65f5,ikp40n65f5 highspeedswitchingseriesfifthgeneration rev.1.1,2012-11-09 tu...
Description	650V DuoPack IGBT and Diode High speed switching series fifth generation
File Size	2,678.52K / 18 Page	View it Online	Download Datasheet

				New Japan Radio
Part No.	NJU6367SERIES NJU6367
OCR Text	...F, @VDD/2 45 50 SYM Symmetry CL=30pF, @VDD/2 45 50 Output Signal Rise CL=15pF,10% to 90% 3 tr Time CL=30pF,10% to 90% 4 Output Signal Fall CL=15pF,90% to 10% 3 tf Time CL=30pF,90% to 10% 4 TPLZ Output Disable time CL=15pF,RUP=10k TPZL Outpu...
Description	Fundamental Quartz Crystal Oscillator From old datasheet system
File Size	49.15K / 6 Page	View it Online	Download Datasheet

				Murata Manufacturing Co., Ltd. Murata Manufacturing Co...
Part No.	GRM1555C1H100JA01D
OCR Text	... in the table. 8 q/dissipation 30pf and over:q R 1000 r6,r7,c8,l8 (1)temperature compensating type factor (d.f.) 30pf and below:q R 400+20c w.v.:100v :0.025max.(c 0.068 m f) :0.05max.(c R 0.068 m f) c:nominal cap...
Description	CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL GRM1555C1H100JA01_ (0402, C0G, 10pF, 50Vdc) CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL GRM1555C1H100JA01_ (0402, C0G, 10pF, 50Vdc)
File Size	559.73K / 29 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
Part No.	K6F1016U4C-EF70 DS_K6F1016U4C K6F1016U4C-AF55 K6F1016U4C-AF70 K6F1016U4C-EF55 DSK6F1016U4C
OCR Text	... The parameter is measured with 30pF test load. 2. Typical values are measured at VCC=3.0V, TA=25C and not 100% tested. PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. Vcc Vss Row Addresses Memory ar...
Description	64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
File Size	172.16K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K6F2008S2E-F K6F2008S2E
OCR Text	... The parameter is measured with 30pF test load. 2. Typical value are measured at VCC=2.5V, TA=25C, and not 100% tested. PIN DESCRIPTION A11 A9 A8 A13 WE CS2 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 3...
Description	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
File Size	129.58K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2008U2E-EF70 K6F2008U2E-YF55 K6F2008U2E-EF550 DSK6F2008U2E
OCR Text	... The parameter is measured with 30pF test load. 2. Typical values are measured at VCC=3.0V, TA=25C and not 100% tested. PIN DESCRIPTION A11 A9 A8 A13 WE CS2 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2...
Description	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM 256K X 8 STANDARD SRAM, 55 ns, PBGA36
File Size	173.65K / 10 Page	View it Online	Download Datasheet

For 3.0pf Found Datasheets File :: 5458 Search Time::3.703ms
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