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IRF[International Rectifier]
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| Part No. |
IRGBC20MD2-S
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| OCR Text |
..., T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf E...200V 65 138 nC TJ = 25C See Fig. 124 360 TJ = 125C 16 di/dt = 200A/s 240 -- A/s TJ = 25C See Fig. 21... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A)
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| File Size |
376.29K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB430UD2
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| OCR Text |
..., T J = 150C ----- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf E...200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt = 200A/s --A/s TJ = 25C See Fig. --TJ = 125C 17... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)
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| File Size |
381.32K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF634NSPBF IRF634NLPBF IRF634NPBF
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| OCR Text |
...0V, TJ = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 34 ID = 4.8A --- --- 6.5 nC VDS = 200V --- --- 16 VGS = 10V, See Fig. 6 and 13 --- 8.4 --- VDD = 125V --- 16 --- ID = 4.8A ns --- 28 --- RG = 1.3 --- 15 --- VGS = 10V, S... |
| Description |
HEXFET Power MOSFET
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| File Size |
219.70K /
11 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRF5Y31N20
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| OCR Text |
... 160V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 160V VDD = 100V, ID = 18A, VGS = 10V, RG = 2.5
IGSS IGSS Qg Q gs ...200V, TJ 150C
Case Outline and Dimensions -- TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.1... |
| Description |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
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| File Size |
97.48K /
7 Page |
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it Online |
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Mitsubishi Electric Sem...
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| Part No. |
FS10UM-9
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| OCR Text |
...25w t c = 25? pulse test v gs =20v 10v 8v 6v 5v 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 23 5710 1 23 5710 2 23 5710 3 5 3 2 2 t c = 25? single ...200v, i d = 5a, v gs = 10v, r gen = r gs = 50 w i s = 5a, v gs = 0v channel to case electrical... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
42.78K /
4 Page |
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it Online |
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Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FS7VS-12
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| OCR Text |
...CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 125W 8V
DRAIN CURRENT ID (A)
20
10
DRAIN CURRENT ID (A)
16 TC = 25C Pulse Test 12 ...200V VGS = 10V RGEN = RGS = 50
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
tf tr td(on) 5 7 1... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
46.66K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS7UM-12
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| OCR Text |
...CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 125W 8V
DRAIN CURRENT ID (A)
20
10
DRAIN CURRENT ID (A)
16 TC = 25C Pulse Test 12 ...200V VGS = 10V RGEN = RGS = 50
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
tf tr td(on) 5 7 1... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
48.00K /
4 Page |
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it Online |
Download Datasheet |
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