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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
2SK1365
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| OCR Text |
... (ON) = 1.5 (typ.) : |Yfs| = 4.0 S (typ.) Unit: mm
Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement-mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Dra... |
| Description |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
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| File Size |
439.88K /
6 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2085
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| OCR Text |
...h Tstg
2 1
Ratings 100 20 1.0 4.0 1.0 0.9 150 -55 to +150
Unit V V A A A W C C
2
2SK2085
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak curren... |
| Description |
Silicon N-Channel MOS FET
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| File Size |
41.60K /
9 Page |
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ROHM[Rohm]
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| Part No. |
2SK2094_1 2SK2094
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| OCR Text |
...nit : mm)
CPT3
6.5 5.1
2.3 0.5
Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy.
5.5
1.5
0.9
0.75 0.65
(1... |
| Description |
4V Drive Nch MOS FET
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| File Size |
77.51K /
5 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2096
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| OCR Text |
...(BR)GSS I GSS Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to dra... |
| Description |
Silicon N-Channel MOS FET
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| File Size |
36.53K /
7 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
2SK2173
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| OCR Text |
...00 A (max) (VDS = 60 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP... |
| Description |
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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| File Size |
407.13K /
6 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2225
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| OCR Text |
...V(BR)DSS I GSS Min 1500 -- -- 2.0 -- 0.45 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 9 0.75 990 125 60 17 50 150 50 0.9 1750 Max -- 1 500 4.0 12 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F ... |
| Description |
Silicon N-Channel MOS FET
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| File Size |
44.48K /
9 Page |
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FUJI[Fuji Electric]
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| Part No. |
2SK2257-01
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| OCR Text |
...f
N-channel MOS-FET
500V
0,4
17A
150W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25... |
| Description |
N-channel MOS-FET
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| File Size |
207.55K /
2 Page |
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NEC[NEC]
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| Part No. |
2SK2275
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| OCR Text |
...IMENSIONS
(in millimeters)
10.0 0.3 4.5 0.2 2.7 0.2
FEATURES
3.2 0.2
* * *
Low On-state Resistance RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2.0 A)
3 0.1 123 4 0.2 12.0 0.2 13.5 MIN. 0.65 0.1
LOW Ciss
Ciss = 1 000 p... |
| Description |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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| File Size |
93.01K /
8 Page |
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NEC, Corp.
NEC[NEC]
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| Part No. |
2SK2358 2SK2357
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| OCR Text |
...IMENSIONS
(in millimeters)
10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2
FEATURES
* Low On-Resistance
2SK2357: RDS(on) = 0.9 (VGS = 10 V, ID = 3.0 A)
15.0 0.3
2SK2358: RDS(on) = 1.0 (VGS = 10 V, ID = 3.0 A)
* Low Ciss Ciss = 1050 pF TY... |
| Description |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
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| File Size |
60.06K /
8 Page |
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SANKEN[Sanken electric]
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| Part No. |
2SK2421
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| OCR Text |
...) RDS (on) Ciss Coss ton toff 2.0 18 25 17.5 2400 950 400 195 20 min 60 100 100 4.0 Ratings typ max Unit V nA A V S m pF pF ns ns
(Ta = 25C)
Unit V V A A W mJ A C C
Conditions I D = 100A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = ... |
| Description |
MOSFET
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| File Size |
32.36K /
1 Page |
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it Online |
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Price and Availability
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